公开(公告)号：US10249627B2

公开(公告)日：2019-04-02

申请号：US15621315

申请日：2017-06-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Hoon Han ,  Dong Wan Kim ,  Ji Hun Kim ,  Jae Joon Song ,  Hiroshi Takeda

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor device is provided. The semiconductor device includes an upper interlayer insulating layer disposed on a substrate. A first electrode spaced apart from the upper interlayer insulating layer is disposed on the substrate. A contact structure penetrating the upper interlayer insulating layer is disposed on the substrate. An upper support layer having a first portion covering an upper surface of the upper interlayer insulating layer, to surround an upper side surface of the contact structure, and a second portion extending in a horizontal direction from the first portion and surrounding an upper side surface of the first electrode, is disposed. A dielectric conformally covering the first electrode and a second electrode on the dielectric are disposed.

公开(公告)号：US20220172926A1

公开(公告)日：2022-06-02

申请号：US17443535

申请日：2021-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Wan Kim ,  Beom Rae Kim ,  Dong Hyeon Na ,  Young Jin Noh ,  Seung Bo Shim ,  Sang-Ho Lee ,  Yong Woo Lee ,  Jun Ho Lee ,  Dong Hee Han

IPC: H01J37/32

Abstract: A method for fabricating a semiconductor device includes providing a wafer on a lower electrode inside a plasma processing apparatus. A first power having a first and second frequency is provided to the lower electrode. A second power is provided to an RF induction electrode through the lower electrode. A third power having the second frequency is released outside of a chamber. A plasma process is performed on the wafer while the third power is released. The RF induction electrode is disposed inside an insulating plate surrounding a sidewall of the lower electrode. The RF induction electrode is spaced apart front the lower electrode. The RF induction electrode has an annular shape surrounding the sidewall of the lower electrode. The first power is controlled by a first controller, and the third power is controlled by a second controller different from the first controller.

公开(公告)号：US10134740B2

公开(公告)日：2018-11-20

申请号：US15644877

申请日：2017-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Wan Kim ,  Ji Hun Kim ,  Jae Joon Song ,  Hiroshi Takeda ,  Jung Hoon Han

IPC: H01L27/108 ,  H01L29/423 ,  H01L29/49 ,  H01L29/06 ,  H01L23/528 ,  H01L21/28 ,  H01L21/02

Abstract: A semiconductor device including a substrate; a trench formed within the substrate; a gate insulating film formed conformally along a portion of a surface of the trench; a gate electrode formed on the gate insulating film and filling a portion of the trench; a capping film formed on the gate electrode and filling the trench; and an air gap formed between the capping film and the gate insulating film.