公开(公告)号：US20190109175A1

公开(公告)日：2019-04-11

申请号：US15953573

申请日：2018-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyo Seop Kim ,  Chang Woo Sun ,  Gyu Hwan Oh ,  Joon Kim ,  Joon Youn Hwang

IPC: H01L27/24 ,  H01L45/00 ,  H01L23/525

CPC classification number: H01L27/2427 ,  H01L23/525 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144

Abstract: A semiconductor device is provided including a base insulating layer on a substrate; a first conductive line that extends in a first direction on the base insulating layer; data storage structures on the first conductive line; selector structures on the data storage structures, each of the selector structures including a lower selector electrode, a selector, and an upper selector electrode; an insulating layer in a space between the selector structures; and a second conductive line disposed on the selector structures and the insulating layer and extended in a second direction intersecting the first direction. An upper surface of the insulating layer is higher than an upper surface of the upper selector electrode.

公开(公告)号：US10833124B2

公开(公告)日：2020-11-10

申请号：US15953573

申请日：2018-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyo Seop Kim ,  Chang Woo Sun ,  Gyu Hwan Oh ,  Joon Kim ,  Joon Youn Hwang

IPC: H01L23/525 ,  H01L27/24 ,  H01L45/00

Abstract: A semiconductor device is provided including a base insulating layer on a substrate; a first conductive line that extends in a first direction on the base insulating layer; data storage structures on the first conductive line; selector structures on the data storage structures, each of the selector structures including a lower selector electrode, a selector, and an upper selector electrode; an insulating layer in a space between the selector structures; and a second conductive line disposed on the selector structures and the insulating layer and extended in a second direction intersecting the first direction. An upper surface of the insulating layer is higher than an upper surface of the upper selector electrode.