公开(公告)号：US20250016987A1

公开(公告)日：2025-01-09

申请号：US18396289

申请日：2023-12-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Won NA ,  Jul Pin PARK ,  Jong Moo LEE ,  Chang Sik KIM

IPC: H10B12/00

Abstract: A semiconductor memory device including a bit line including a metal and extending in a first direction on a substrate; a channel structure on the bit line, including a first channel pattern extending in a second direction, and a second channel pattern spaced apart from the first channel pattern in the first direction and extending in the second direction; a liner film between the bit line and the channel structure, and including the metal; a first word line between the first and second channel patterns, and the first word line extending in the second direction; a second word line between the first and second channel patterns, and extending in the second direction, and the second word line spaced apart from the first word line in the first direction; and first and second capacitors respectively on the first and second channel patterns, and connected to the first and second channel patterns.

公开(公告)号：US20240114674A1

公开(公告)日：2024-04-04

申请号：US18212422

申请日：2023-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Won NA ,  Chang Sik KIM ,  Jun Hwa SONG ,  Ji Hee JUN

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/05

Abstract: A semiconductor memory device includes a substrate; a bit-line on the substrate and extending in a first direction; first and second channel patterns on the bit-line; the second channel pattern being spaced apart from the first channel pattern in the first direction; a first word-line between the first and second channel patterns and extending in a second direction that intersects the first direction; a second word-line between the first and second channel patterns, extending in the second direction, and being spaced apart from the first word-line in the first direction; capacitors on and connected to the channel patterns; wherein the first and second channel patterns include first and second metal oxide patterns sequentially on the bit-line, each of the first and second metal oxide patterns include an amorphous metal oxide, and a composition of the first metal oxide pattern is different from a composition of the second metal oxide pattern.