公开(公告)号：US10658413B2

公开(公告)日：2020-05-19

申请号：US16029260

申请日：2018-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun Woo Park ,  Sun Hyun Kim ,  Ho Woo Park ,  Eung Kyu Lee ,  Chang Keun Lee ,  Hisanori Ihara

IPC: H01L27/146 ,  H01L23/00

Abstract: A semiconductor device includes a lower insulating layer on a lower substrate, a lower pad structure inside the lower insulating layer, an upper insulating layer on the lower insulating layer, an upper pad structure inside the upper insulating layer, and an upper substrate on the upper insulating layer. A via plug passes through at least a portion of each of the upper substrate, the upper insulating layer, and the lower insulating layer, and in contact with the upper pad structure and the lower pad structure. The upper pad structure includes upper pad conductive layers and an upper connection layer between the upper pad conductive layers. The upper connection layer includes a conductive pattern having a shape different from a shape of at least one of the upper pad conductive layers. The via plug is in direct contact with the upper pad conductive layers and the upper connection layer.

公开(公告)号：US11456327B2

公开(公告)日：2022-09-27

申请号：US16524806

申请日：2019-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Gu Jin ,  Young Chan Kim ,  Yong Hun Kwon ,  Eung Kyu Lee ,  Chang Keun Lee ,  Moo Sup Lim ,  Tae Sub Jung

IPC: H01L27/146 ,  H01L31/167

Abstract: An image sensor includes a semiconductor substrate including a plurality of pixel regions, a first surface, and a second surface opposing the first surface, a plurality of transistors adjacent to the first surface of the semiconductor substrate in each of the plurality of pixel regions, a microlens on the second surface of the semiconductor substrate, and a plurality of conductive patterns in contact with the semiconductor substrate and closer to the second surface of the semiconductor substrate than to the first surface of the semiconductor substrate in each of the plurality of pixel regions.

公开(公告)号：US20200286942A1

公开(公告)日：2020-09-10

申请号：US16524806

申请日：2019-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Gu JIN ,  Young Chan Kim ,  Yong Hun Kwon ,  Eung Kyu Lee ,  Chang Keun Lee ,  Moo Sup Lim ,  Tae Sub Jung

IPC: H01L27/146 ,  H01L31/167

Abstract: An image sensor includes a semiconductor substrate including a plurality of pixel regions, a first surface, and a second surface opposing the first surface, a plurality of transistors adjacent to the first surface of the semiconductor substrate in each of the plurality of pixel regions, a microlens on the second surface of the semiconductor substrate, and a plurality of conductive patterns in contact with the semiconductor substrate and closer to the second surface of the semiconductor substrate than to the first surface of the semiconductor substrate in each of the plurality of pixel regions.