公开(公告)号：US20150162427A1

公开(公告)日：2015-06-11

申请号：US14458288

申请日：2014-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hoon LEE ,  Chan Ho PARK

IPC: H01L29/778 ,  H01L29/04 ,  H01L29/267

CPC classification number: H01L29/7787 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/66462

Abstract: A semiconductor device may include: a first semiconductor layer having a first band gap; a second semiconductor layer including first and second regions separately disposed on an upper surface of the first semiconductor layer and having a second band gap wider than the first band gap; and a third semiconductor layer disposed between the first and second regions of the second semiconductor layer, extending up to at least a portion of the first semiconductor layer. The third semiconductor layer may have a channel region doped with an impurity.

Abstract translation: 半导体器件可以包括：具有第一带隙的第一半导体层; 第二半导体层，包括分别设置在第一半导体层的上表面上并具有比第一带隙宽的第二带隙的第一和第二区域; 以及第三半导体层，设置在所述第二半导体层的所述第一和第二区之间，延伸到所述第一半导体层的至少一部分。 第三半导体层可以具有掺杂有杂质的沟道区。