公开(公告)号：US20190081151A1

公开(公告)日：2019-03-14

申请号：US15915508

申请日：2018-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan-hyeong LEE ,  Hoon-joo NA ,  Sung-in SUH ,  Min-woo SONG ,  Byoung-hoon LEE ,  Hu-yong LEE ,  Sang-jin HYUN

IPC: H01L29/49 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/28 ,  H01L29/66

Abstract: A semiconductor device includes an active region in a substrate, at least one nano-sheet on the substrate and spaced apart from a top surface of the active region, a gate above or below the nano-sheet, a gate insulating layer between the at least one nano-sheet and the gate, and source/drain regions on the active region at both sides of the at least one nano-sheet. The at least one nano-sheet includes a channel region; a gate disposed above or below the nano-sheet and including a single metal layer having different compositions of metal atoms of a surface and an inside thereof; a gate insulating layer between the nano-sheet and the gate; and source/drain regions disposed in the active region of both sides of the at least one nano-sheet.