公开(公告)号：US20230411498A1

公开(公告)日：2023-12-21

申请号：US18175821

申请日：2023-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-Hee HAN ,  Bong Kwan BAEK ,  Sang Shin JANG ,  Koung Min RYU ,  Jong Min BAEK ,  Jung Hoo SHIN ,  Jun Hyuk LIM ,  Jung Hwan CHUN

IPC: H01L29/66 ,  H01L21/8234

CPC classification number: H01L29/66795 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823475

Abstract: A method for fabricating semiconductor device may include forming a source/drain pattern on a fin-type pattern, forming an etch stop film and an interlayer insulating film on the source/drain pattern, forming a contact hole in the interlayer insulating film, forming a sacrificial liner along a sidewall and a bottom surface of the contact hole, performing an ion implantation process while the sacrificial liner is present, removing the sacrificial liner and forming a contact liner along the sidewall of the contact hole, and forming a source/drain contact on the contact liner. The ion implantation process may include implant impurities into the source/drain pattern. The source/drain contact may be connected to the source/drain pattern.