公开(公告)号：US09768129B2

公开(公告)日：2017-09-19

申请号：US15200523

申请日：2016-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Seob Lee ,  Hyuk-Joon Kwon ,  Bo-Tak Lim

IPC: H01L23/48 ,  H01L23/58 ,  H01L21/66 ,  H01L23/00 ,  H01L29/49 ,  H01L23/528

CPC classification number: H01L23/573 ,  G01R31/2884 ,  H01L22/34 ,  H01L23/522 ,  H01L23/5283 ,  H01L23/585 ,  H01L29/4916 ,  H01L2224/0401 ,  H01L2924/1434

Abstract: A semiconductor device includes a semiconductor die, a semiconductor integrated circuit and a three-dimensional crack detection structure. The semiconductor die includes a central region and a peripheral region surrounding the central region. The semiconductor integrated circuit is formed in the central region. The three-dimensional crack detection structure is formed in a ring shape in the peripheral region to surround the central region. The three-dimensional crack detection structure is expanded in a vertical direction. Using the three-dimensional crack detection structure, the crack penetration of various types may be detected thoroughly.