公开(公告)号：US09893020B2

公开(公告)日：2018-02-13

申请号：US15227953

申请日：2016-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Baik-Woo Lee ,  Eun-Seok Song ,  Young-Jae Kim ,  Jae-Gwon Jang

IPC: H01L43/02 ,  H01L23/552

CPC classification number: H01L23/552 ,  H01L2224/48091 ,  H01L2224/48228 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: In one embodiment, a semiconductor device comprising, a substrate comprising a wiring layer, a first conductive shielding layer disposed on the substrate and electrically isolated from the wiring layer, the first conductive shielding layer comprising a first bonding surface and a first end surface extending from the first bonding surface, a semiconductor chip disposed on the first conductive shielding layer, a molding member disposed over the first conductive shielding layer to cover the semiconductor chip, a second conductive shielding layer disposed over the first conductive shielding layer and the molding member, the second conductive shielding layer comprising a second bonding surface and a second end surface extending from the second bonding surface, and a bonding portion disposed between the first and second bonding surfaces, the bonding portion comprising a top surface and a bottom surface opposite to the top surface. The bottom surface of the bonding portion contacts the first bonding surface to form a first contact surface. The top surface of the bonding portion contacts the second bonding surface to form a second contact surface. An area of the second contact surface is larger than an area of the second end surface.