公开(公告)号：US20140101513A1

公开(公告)日：2014-04-10

申请号：US14045001

申请日：2013-10-03

Applicant: Samsung Electronics Co., Ltd

Inventor： Nam-shik KIM ,  Dae-wook KIM ,  Bi-woong CHUNG ,  Jun-jin KONG

IPC: H03M13/09

CPC classification number: H03M13/095 ,  G06F11/1004 ,  H03M13/09 ,  H03M13/091

Abstract: A method of performing a cyclic redundancy check (CRC) operation in a memory system, and a memory controller that uses the same. The method includes initializing a linear feed-back shift register (LFSR) circuit in a CRC polynomial, generating CRC parity information with respect to input data to be stored in a memory device by using the LFSR circuit, and generating a CRC code with respect to the input data based on the CRC parity information, such that the initialization of the LFSR circuit is set such that a register initial value of the LFSR circuit is determined to satisfy a condition that, when data input to the LFSR circuit is first state information, the CRC parity information generated from the LFSR circuit is second state information.

Abstract translation: 在存储器系统中执行循环冗余校验（CRC）操作的方法和使用该循环冗余校验（CRC）的存储器控​​制器。 该方法包括以CRC多项式初始化线性反馈移位寄存器（LFSR）电路，通过使用LFSR电路产生关于要存储在存储器件中的输入数据的CRC奇偶校验信息，以及生成关于 基于CRC奇偶校验信息的输入数据，使得LFSR电路的初始化被设置为使得LFSR电路的寄存器初始值被确定为满足以下条件：当输入到LFSR电路的数据是第一状态信息时， 从LFSR电路产生的CRC奇偶校验信息是第二状态信息。