公开(公告)号：US20240336839A1

公开(公告)日：2024-10-10

申请号：US18508941

申请日：2023-11-14

Applicant: Samsung Electronics Co,. Ltd.

Inventor： GAYOUNG SONG ,  JUNG-MIN OH ,  TAE SOO KWON ,  JUN-EUN LEE ,  SANG WON BAE ,  Minjae SUNG ,  YOUN SUG YOO ,  WOOK CHANG

IPC: C09K13/06 ,  H01L21/3213 ,  H01L21/768

CPC classification number: C09K13/06 ,  H01L21/32134 ,  H01L21/76841

Abstract: A titanium nitride etchant composition and a method of forming a semiconductor device using the same are provided. The titanium nitride etchant composition includes hydrogen peroxide, phosphoric acid, and an amine compound, wherein the amine compound includes two or more nitrogen atoms.