公开(公告)号：US20200091888A1

公开(公告)日：2020-03-19

申请号：US16356164

申请日：2019-03-18

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun LEE ,  Tae Yoon KIM ,  Moon Chul LEE ,  Chang Hyun LIM ,  Nam Jung LEE ,  Il Han LEE

IPC: H03H9/02 ,  H03H9/17 ,  H03H3/02

Abstract: A bulk-acoustic wave resonator includes a substrate, a first layer, a second layer, a membrane layer, and a resonance portion. The substrate includes a substrate protection layer. The first layer is disposed on the substrate protection layer. The second layer is disposed outside of the first layer. The membrane layer forms a cavity with the substrate protection layer and the first layer. The resonance portion is disposed on the membrane layer. Either one or both of the substrate protection layer and the membrane layer includes a protrusion disposed in the cavity.