Apparatus and method for etching organic layer
    1.
    发明授权
    Apparatus and method for etching organic layer 有权
    蚀刻有机层的装置和方法

    公开(公告)号:US09054342B2

    公开(公告)日:2015-06-09

    申请号:US14029296

    申请日:2013-09-17

    Abstract: Provided are an apparatus and method for etching an organic layer, in which an organic material deposited in a non-layer forming area of a substrate is etched. The apparatus includes an etching chamber; a plasma generator configured to supply plasma into the etching chamber; a stage disposed in the etching chamber and configured to support the substrate; and a mask configured to guide the plasma toward the non-pixel area.

    Abstract translation: 提供了蚀刻有机层的装置和方法,其中沉积在衬底的非层形成区域中的有机材料被蚀刻。 该设备包括蚀刻室; 等离子体发生器,其被配置为将等离子体供应到所述蚀刻室中; 设置在所述蚀刻室中并被配置为支撑所述基板的台; 以及被配置为将等离子体引向非像素区域的掩模。

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