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公开(公告)号:US20240179961A1
公开(公告)日:2024-05-30
申请号:US18365137
申请日:2023-08-03
Applicant: Samsung Display Co., Ltd.
Inventor: Yongseon Jo , Kwangwoo Park , Donghwan Shim , Eonjoo Lee , Jinyong Lee , Cheol Jang
IPC: H10K59/124 , G09G3/3233 , H10K77/10
CPC classification number: H10K59/124 , G09G3/3233 , H10K77/10 , H10K77/111 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861
Abstract: There is provided a display apparatus including a mask layer having a plurality of openings, a substrate located below the mask layer and having a plurality of first grooves corresponding to the plurality of openings, an inorganic insulating layer located on the mask layer and having through holes corresponding to at least some of the plurality of openings, and an organic insulating layer located on the inorganic insulating layer and filling the through holes.
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公开(公告)号:US20240155896A1
公开(公告)日:2024-05-09
申请号:US18500113
申请日:2023-11-02
Applicant: Samsung Display Co., Ltd.
Inventor: Kwangwoo Park , Donghwan Shim , Eonjoo Lee , Jinyong Lee , Cheol Jang , Yongseon Jo
IPC: H10K59/131 , G09G3/3233
CPC classification number: H10K59/131 , G09G3/3233 , G09G2300/0809 , G09G2300/0852 , G09G2300/0861
Abstract: A display device is disclosed that includes a substrate, a scan line disposed on the substrate and extending in a first direction, a data line disposed on the substrate and extending in a second direction crossing the first direction, a first transistor disposed on the substrate and including a first semiconductor layer and a first gate electrode overlapping the first semiconductor layer, a second transistor including a second semiconductor layer electrically connected to the first transistor and the data line, and a second gate electrode overlapping the second semiconductor layer and electrically connected to the scan line, at least one inorganic insulating layer disposed on the substrate, and an auxiliary transistor disposed at an opposite side to the second transistor with a valley defined in the at least one inorganic insulating layer therebetween, wherein the auxiliary transistor is electrically connected to the data line and the scan line.
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公开(公告)号:US11915640B1
公开(公告)日:2024-02-27
申请号:US18119498
申请日:2023-03-09
Applicant: Samsung Display Co., Ltd.
Inventor: Donghwan Shim , Kwangwoo Park , Eonjoo Lee , Jin-Yong Lee , Cheol Jang , Yongseon Jo
IPC: G09G3/32
CPC classification number: G09G3/32 , G09G2300/0842 , G09G2310/0267 , G09G2310/0275 , G09G2310/0278 , G09G2310/08
Abstract: A pixel circuit includes a light-emitting element, a write transistor writing a data voltage, a driving transistor generating a driving current based on the data voltage and applying the driving current to the light-emitting element, a first initialization transistor applying a first initialization voltage to a control electrode of the driving transistor, a blocking transistor disposed between the light-emitting element and the driving transistor, a first blocking control transistor including a control electrode connected to the control electrode of the driving transistor, a first electrode receiving a first signal, and a second electrode connected to a control electrode of the blocking transistor, and a second blocking control transistor including a control electrode connected to the control electrode of the driving transistor, a first electrode receiving a second signal, and a second electrode connected to the control electrode of the blocking transistor.
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公开(公告)号:US20240090265A1
公开(公告)日:2024-03-14
申请号:US18508151
申请日:2023-11-13
Applicant: Samsung Display Co., Ltd.
Inventor: Jinsuk Lee , Jin Jeon , Sugwoo Jung , Shinbeom Choi , Youngin Hwang , Byungno Kim , Heeyeon Kim , Kohei EBISUNO , Nalae Lee , Illhwan Lee , Jongmin Lee , Joohyeon Jo , Changha Kwak , Yongseon Jo
IPC: H10K59/121 , H10K77/10
CPC classification number: H10K59/1213 , H10K77/111 , H01L27/1218
Abstract: Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).
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公开(公告)号:US20210265438A1
公开(公告)日:2021-08-26
申请号:US17034252
申请日:2020-09-28
Applicant: Samsung Display Co., Ltd.
Inventor: Jinsuk Lee , Jin Jeon , Sugwoo Jung , Shinbeom Choi , Youngin Hwang , Byungno Kim , Heeyeon Kim , Kohei EBISUNO , Nalae Lee , Illhwan Lee , Jongmin Lee , Joohyeon Jo , Changha Kwak , Yongseon Jo
Abstract: Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).
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公开(公告)号:US20240324347A1
公开(公告)日:2024-09-26
申请号:US18531428
申请日:2023-12-06
Applicant: Samsung Display Co., Ltd.
Inventor: Donghwan Shim , Kwangwoo Park , Hyemin Park , Eonjoo Lee , Jinyong Lee , Cheol Jang , Yongseon Jo
IPC: H10K59/131 , H10K59/12
CPC classification number: H10K59/131 , H10K59/1201
Abstract: A display apparatus includes: a first display element configured to emit light of a first color and including a first pixel electrode; a second display element configured to emit light of a second color different from the first color, and including a second pixel electrode; a third display element configured to emit light of a third color different from the first color and the second color, and including a third pixel electrode; a fourth display element configured to emit light of the first color and including a fourth pixel electrode; and a first connection line connecting the first pixel electrode and the fourth pixel electrode to each other, the first connection line directly contacting the first pixel electrode and the fourth pixel electrode.
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公开(公告)号:US12022717B2
公开(公告)日:2024-06-25
申请号:US18110802
申请日:2023-02-16
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Eonjoo Lee , Kwangwoo Park , Donghwan Shim , Jinyong Lee , Cheol Jang , Yongseon Jo
IPC: H10K59/40 , G06F3/044 , H10K59/121 , H10K59/122 , H10K59/80 , H10K59/88
CPC classification number: H10K59/40 , G06F3/0446 , H10K59/1213 , H10K59/1216 , H10K59/122 , H10K59/879 , H10K59/8792 , H10K59/88 , G06F2203/04112
Abstract: A display apparatus includes a substrate, a first light-emitting element disposed over the substrate to emit light, a first dummy light-emitting element disposed over the substrate to emit light of a same color as a color of the light emitted from the first light-emitting element, an input sensing layer disposed on the first light-emitting element and the first dummy light-emitting element, and a light-blocking layer disposed on the input sensing layer, where an opening is defined through the light-blocking layer to overlap the first light-emitting element, and the input sensing layer includes a diffraction structure disposed to overlap the first dummy light-emitting element.
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公开(公告)号:US11864421B2
公开(公告)日:2024-01-02
申请号:US17034252
申请日:2020-09-28
Applicant: Samsung Display Co., Ltd.
Inventor: Jinsuk Lee , Jin Jeon , Sugwoo Jung , Shinbeom Choi , Youngin Hwang , Byungno Kim , Heeyeon Kim , Kohei Ebisuno , Nalae Lee , Illhwan Lee , Jongmin Lee , Joohyeon Jo , Changha Kwak , Yongseon Jo
IPC: H01L27/32 , H10K59/121 , H10K77/10 , H01L27/12 , H01L29/786 , H10K59/12 , H10K102/00
CPC classification number: H10K59/1213 , H10K77/111 , H01L27/1218 , H01L27/1262 , H01L29/78603 , H10K59/1201 , H10K2102/311
Abstract: Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).
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