公开(公告)号：US20220415986A1

公开(公告)日：2022-12-29

申请号：US17700195

申请日：2022-03-21

Applicant: Samsung Display Co., Ltd.

Inventor： HYUNGGI JUNG ,  YONGDUCK SON ,  SOON CHANG YEON ,  YOUNGHOON YOO ,  JAEMIN LEE ,  DOGI LIM ,  SOOJIN JEONG ,  HYUNGTAE JUNG

IPC: H01L27/32

Abstract: A transistor is disclosed that includes a substrate, an active layer, a gate electrode, a first electrode, a second electrode, and a first connection electrode. The active includes a first region, a second region, and a channel region between the first region and the second region. The gate electrode is disposed on the active layer and overlaps the channel region. The first electrode is disposed on the substrate and electrically connects to the first region. The second electrode is disposed on the substrate and electrically connects to the second region. The first connection electrode is disposed on the substrate and electrically connects the gate electrode and the second electrode.