公开(公告)号：US20130149819A1

公开(公告)日：2013-06-13

申请号：US13760683

申请日：2013-02-06

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoung-Bo KIM ,  Yong-Woo Park ,  Chang-Young Jeong ,  Sung-Won Doh ,  Dae-Woo Lee ,  Jong-Mo Yeo

IPC: H01L29/66

CPC classification number: H01L29/66742 ,  H01L27/3248 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

Abstract: Aspects of the invention relate to thin film transistors, a method of fabricating the same, and an organic light-emitting diode device using the same. A thin film transistor according to an aspect of the invention includes a semiconductor layer formed from polysilicon in which a grain size deviation is within a range of substantially ±10%. Accordingly, aspects of the invention can improve non-uniformity of image characteristics due to a non-uniform grain size in polysilicon produced by a sequential lateral solidification (SLS) crystallization process.