公开(公告)号：US20200027939A1

公开(公告)日：2020-01-23

申请号：US16406825

申请日：2019-05-08

Applicant: Samsung Display Co., Ltd.

Inventor： Youngjin CHO ,  Hyunwoong KIM ,  Joong-soo MOON ,  Seung-kyu LEE ,  Yangwan KIM

IPC: H01L27/32 ,  G09G3/3225 ,  G09G3/3266 ,  G09G3/3275

Abstract: Provided is pixel including a first transistor including a first drain region electrically connected to a light emitting diode, a first gate electrode, a first channel region overlapping the first gate electrode, and a first source region, a first sub-transistor including a first sub-gate electrode, a first sub-channel region overlapping the first sub-gate electrode, a first sub-drain region connected to the first gate electrode, and a first sub-source region, a second sub-transistor including a second sub-gate electrode, a second sub-channel region overlapping the second sub-gate electrode, a second sub-drain region connected to the first sub-source region, and a second sub-source region, and a shielding pattern overlapping the first sub-source region and the second sub-drain region and not overlapping the first sub-channel region, wherein a width of the first sub-channel region is greater than a width of the second sub-channel region.

公开(公告)号：US20240389391A1

公开(公告)日：2024-11-21

申请号：US18788091

申请日：2024-07-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Youngjin CHO ,  Hyunwoong KIM ,  Joong-soo MOON ,  Seung-kyu LEE ,  Yangwan KIM

IPC: H10K59/121 ,  G09G3/3225 ,  G09G3/3266 ,  G09G3/3275 ,  H10K59/126 ,  H10K59/131

Abstract: Provided is pixel including a first transistor including a first drain region electrically connected to a light emitting diode, a first gate electrode, a first channel region overlapping the first gate electrode, and a first source region, a first sub-transistor including a first sub-gate electrode, a first sub-channel region overlapping the first sub-gate electrode, a first sub-drain region connected to the first gate electrode, and a first sub-source region, a second sub-transistor including a second sub-gate electrode, a second sub-channel region overlapping the second sub-gate electrode, a second sub-drain region connected to the first sub-source region, and a second sub-source region, and a shielding pattern overlapping the first sub-source region and the second sub-drain region and not overlapping the first sub-channel region, wherein a width of the first sub-channel region is greater than a width of the second sub-channel region.

公开(公告)号：US20190279543A1

公开(公告)日：2019-09-12

申请号：US16228679

申请日：2018-12-20

Applicant: Samsung Display Co., Ltd.

Inventor： Hyunwoong KIM ,  Seung-kyu LEE ,  Kwang-min KIM ,  Jongwon PARK

IPC: G09G3/00 ,  G01N21/958 ,  H05K1/02

Abstract: A display device includes a display panel, a first inspection line, a second inspection line, and an inspection circuit controlling a connection between the first inspection line and a first pixel group and a connection between the second inspection line and the second pixel group. The inspection circuit includes a switching part including a first switching part that controls the connection between the first inspection line and the first pixel group and a second switching part that controls the connection between the second inspection line and the second pixel group and a dummy circuit including a dummy transistor that is electrically connected to the switching part and including a first dummy electrode, a second dummy electrode that is connected to the first dummy electrode, and a dummy control electrode.

公开(公告)号：US20210126072A1

公开(公告)日：2021-04-29

申请号：US17141001

申请日：2021-01-04

Applicant: Samsung Display Co., Ltd.

Inventor： Youngjin CHO ,  Hyunwoong KIM ,  Joong-soo MOON ,  Seung-kyu LEE ,  Yangwan KIM

IPC: H01L27/32 ,  G09G3/3275 ,  G09G3/3225 ,  G09G3/3266

Abstract: Provided is pixel including a first transistor including a first drain region electrically connected to a light emitting diode, a first gate electrode, a first channel region overlapping the first gate electrode, and a first source region, a first sub-transistor including a first sub-gate electrode, a first sub-channel region overlapping the first sub-gate electrode, a first sub-drain region connected to the first gate electrode, and a first sub-source region, a second sub-transistor including a second sub-gate electrode, a second sub-channel region overlapping the second sub-gate electrode, a second sub-drain region connected to the first sub-source region, and a second sub-source region, and a shielding pattern overlapping the first sub-source region and the second sub-drain region and not overlapping the first sub-channel region, wherein a width of the first sub-channel region is greater than a width of the second sub-channel region.