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    DISPLAY DEVICE
    1.
    发明申请
    DISPLAY DEVICE 有权

    公开(公告)号：US20220013743A1

    公开(公告)日：2022-01-13

    申请号：US17146845

    申请日：2021-01-12

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jin-Suk SEO ,  Eung Taek KIM ,  Tae Sik KIM ,  Hee Yeon KIM ,  Jong Hyun YUN ,  Na Lae LEE ,  Jin-Suk LEE ,  Joo Hyeon JO

    IPC: H01L51/50 ,  H01L51/00

    Abstract: A display device includes: a substrate; a transistor positioned on the substrate; and a light-emitting device electrically connected to the transistor, wherein the substrate includes a first layer, a second layer positioned between the first layer and the transistor, and a third layer positioned between the second layer and the transistor, the first layer and the third layer include organic materials, and the organic material included by the first layer and the organic material included by the third layer have different half-lives for a corona discharge.

    DISPLAY DEVICE
    2.
    发明申请
    DISPLAY DEVICE 有权

    公开(公告)号：US20220059031A1

    公开(公告)日：2022-02-24

    申请号：US17397878

    申请日：2021-08-09

    Applicant: Samsung Display Co., Ltd.

    Inventor： Eung Taek KIM ,  Hee Yeon KIM ,  Hwang Sup SHIN ,  Na Lae LEE ,  Jin Suk LEE ,  Taek Geun LEE ,  Joo Hyeon JO ,  Jung Mi CHOI ,  Hong Jun CHOI ,  Young In HWANG

    IPC: G09G3/3233 ,  H01L27/32

    Abstract: A display device includes a base substrate including a first substrate and a second substrate sequentially laminated, a lower semiconductor layer disposed on at least one of the first substrate and the second substrate, a buffer layer disposed on the base substrate, an active semiconductor layer disposed on the buffer layer and including a first active layer of a first transistor and a second active layer of a second transistor, a first insulating layer disposed on the active semiconductor layer, and a first conductive layer disposed on the first insulating layer and including a first gate electrode of the first transistor and a second gate electrode of the second transistor, wherein the lower semiconductor layer overlaps the first active layer, and does not overlap the second active layer.

    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    3.
    发明公开
    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20240021770A1

    公开(公告)日：2024-01-18

    申请号：US18336200

    申请日：2023-06-16

    Applicant: Samsung Display Co., LTD.

    Inventor： Hwang Sup SHIN ,  Suk Hoon KU ,  Eung Taek KIM ,  Hee Yeon KIM ,  Na Lae LEE ,  Joo Hyeon JO ,  Jung-Mi CHOI ,  HONGJUN CHOI

    IPC: H01L33/62 ,  H01L25/16 ,  H01L33/02 ,  H01L33/00

    CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/025 ,  H01L33/0095

    Abstract: An embodiment of the invention provides a display device including: a substrate; a first transistor comprising a first semiconductor layer and a second transistor comprising a second semiconductor layer, the first and second semiconductor layers positioned on the substrate; a light emitting diode connected to the first transistor, wherein: the first transistor is a driving transistor; the second transistor is a switching transistor; a first concentration of fluorine included in the first semiconductor layer is higher than a second concentration of fluorine in the second semiconductor layer; and a first difference between the first and second concentrations substantially at or near a first interface of the first and second semiconductor layers is larger than a second difference between the first and second concentrations at a second interface of the first and second semiconductor layers, the second interface further from the substrate than the first interface.

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