公开(公告)号：US09613876B2

公开(公告)日：2017-04-04

申请号：US14976492

申请日：2015-12-21

Applicant: Samsung Display Co., Ltd.

Inventor： Yong Tae Cho ,  Joong Tae Kim ,  In Woo Kim ,  Kwang Su Park ,  Da Young Lee ,  Min Ha Hwang ,  Seong Jun Hwang

IPC: H01L21/66 ,  H01L27/12

CPC classification number: H01L22/32 ,  H01L22/30 ,  H01L27/1222 ,  H01L27/1248

Abstract: A thin film transistor (TFT) substrate includes a base substrate, a TFT disposed on the base substrate. The TFT includes a gate electrode, a semiconductor layer comprising a channel region, and a source electrode and a drain electrode spaced apart from one another by a length of the channel region. The TFT substrate further includes a gate insulating layer disposed between the gate electrode and the semiconductor layer and a measuring pattern configured to measure a length of the channel region.

公开(公告)号：US20160293504A1

公开(公告)日：2016-10-06

申请号：US14976492

申请日：2015-12-21

Applicant: Samsung Display Co., Ltd.

Inventor： Yong Tae Cho ,  Joong Tae Kim ,  In Woo Kim ,  Kwang Su Park ,  Da Young Lee ,  Min Ha Hwang ,  Seong Jun Hwang

IPC: H01L21/66 ,  H01L27/12

CPC classification number: H01L22/32 ,  H01L22/30 ,  H01L27/1222 ,  H01L27/1248

Abstract: A thin film transistor (TFT) substrate includes a base substrate, a TFT disposed on the base substrate. The TFT includes a gate electrode, a semiconductor layer comprising a channel region, and a source electrode and a drain electrode spaced apart from one another by a length of the channel region. The TFT substrate further includes a gate insulating layer disposed between the gate electrode and the semiconductor layer and a measuring pattern configured to measure a length of the channel region.

Abstract translation: 薄膜晶体管（TFT）基板包括基底基板，设置在基底基板上的TFT。 TFT包括栅电极，包括沟道区的半导体层，以及以沟道区的长度彼此间隔开的源电极和漏电极。 TFT基板还包括设置在栅极电极和半导体层之间的栅极绝缘层和被配置为测量沟道区域的长度的测量图案。