公开(公告)号：US09755054B2

公开(公告)日：2017-09-05

申请号：US14956056

申请日：2015-12-01

Applicant: Samsung Display Co., Ltd.

Inventor： Myung Kwan Ryu ,  Ki Hwan Kim ,  Kap Soo Yoon ,  Hyeon Jun Lee ,  Jeong Uk Heo

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/786 ,  H01L29/423 ,  H01L21/306 ,  H01L21/324

CPC classification number: H01L29/66742 ,  H01L21/324 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78666 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869

Abstract: There are provided a method of manufacturing a thin film transistor and a display including a thin film transistor.The method of manufacturing a thin film transistor includes forming a barrier layer cm a substrate, forming a semiconductor layer on the barrier layer, forming a gate insulating layer on the semiconductor layer, forming a gate electrode on the gate insulating layer, forming an offset region on an external surface of the gate electrode through a plasma heat treatment process or an annealing process, etching, an offset region of the gate electrode, etching a gate insulating layer except for a portion of the gate insulating layer, positioned below the gate electrode, forming an interlayer insulating layer on the gate electrode, and etching, the interlayer insulating layer to form a source electrode and a drain electrode.