公开(公告)号：US20200185537A1

公开(公告)日：2020-06-11

申请号：US16414266

申请日：2019-05-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： KOHEI EBISUNO ,  Sungjun Kim ,  Donghyun Son ,  Jaesoo Jung ,  Sunghoon Moon ,  Jingoo Jung

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12 ,  H01L21/02 ,  H01L21/306 ,  H01L29/66

Abstract: A thin film transistor includes an active layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a capping layer filling a thickness difference between the first portion and the second portion and arranged on the first portion, a gate insulating layer arranged on the capping layer, a gate electrode on the active layer, wherein the gate insulating layer and the capping layer are disposed between the gate electrode and the active layer, and a source electrode and a drain electrode connected to the active layer.

公开(公告)号：US20240324285A1

公开(公告)日：2024-09-26

申请号：US18426365

申请日：2024-01-30

Applicant: Samsung Display Co., Ltd.

Inventor： Moosoon Ko ,  Kohei Ebisuno ,  Sanghoon Oh ,  Jaesoo Jung

IPC: H10K59/121 ,  H10K59/12

CPC classification number: H10K59/1213 ,  H10K59/1201

Abstract: A display apparatus and a manufacturing method may avoid electrical shorting caused by protrusion structures that result from a difference in etch rates. The display apparatus includes a substrate, a semiconductor layer on the substrate, a first metal layer arranged on the semiconductor layer, insulated from the semiconductor layer, and including a first metal layer having a first etch rate under a predetermined condition, and a second metal layer arranged on the first metal layer, contacting an upper surface of the first metal layer, including a second metal material having a second etch rate under the predetermined condition, the second etch rate being less than the first etch rate, and arranged in the upper surface of the first metal layer when viewed in a direction perpendicular to the substrate.

公开(公告)号：US11563126B2

公开(公告)日：2023-01-24

申请号：US17348188

申请日：2021-06-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kohei Ebisuno ,  Sungjun Kim ,  Donghyun Son ,  Jaesoo Jung ,  Sunghoon Moon ,  Jingoo Jung

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12 ,  H01L21/02 ,  H01L21/306 ,  H01L29/66

Abstract: A thin film transistor includes an active layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a capping layer filling a thickness difference between the first portion and the second portion and arranged on the first portion, a gate insulating layer arranged on the capping layer, a gate electrode on the active layer, wherein the gate insulating layer and the capping layer are disposed between the gate electrode and the active layer, and a source electrode and a drain electrode connected to the active layer.

公开(公告)号：US11063155B2

公开(公告)日：2021-07-13

申请号：US16414266

申请日：2019-05-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kohei Ebisuno ,  Sungjun Kim ,  Donghyun Son ,  Jaesoo Jung ,  Sunghoon Moon ,  Jingoo Jung

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12 ,  H01L21/02 ,  H01L21/306 ,  H01L29/66

Abstract: A thin film transistor includes an active layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a capping layer filling a thickness difference between the first portion and the second portion and arranged on the first portion, a gate insulating layer arranged on the capping layer, a gate electrode on the active layer, wherein the gate insulating layer and the capping layer are disposed between the gate electrode and the active layer, and a source electrode and a drain electrode connected to the active layer.

公开(公告)号：US20240324303A1

公开(公告)日：2024-09-26

申请号：US18492708

申请日：2023-10-23

Applicant: Samsung Display Co., Ltd.

Inventor： Jaesoo Jung ,  Moosoon Ko ,  Kohei Ebisuno ,  Sunggeun Bae ,  Sanghoon Oh

IPC: H10K59/122 ,  H10K59/131

CPC classification number: H10K59/122 ,  H10K59/131

Abstract: A display apparatus includes: a display element including a pixel electrode on a substrate; a bus line spaced from the pixel electrode, and located at the same layer as that of the pixel electrode; a pixel-defining layer defining an emission area of the display element, the pixel-defining layer including: an opening overlapping with the pixel electrode, and exposing at least a portion of the pixel electrode; and a hole exposing a portion of the bus line adjacent to the pixel electrode; a separator on the pixel-defining layer; an intermediate layer on the pixel electrode; and an opposite electrode on the intermediate layer. In a plan view, the separator surrounds the pixel electrode and the hole together. The bus line includes: a first line layer; and a second line layer on the first line layer, and including a tip protruding more than an edge of the first line layer.

公开(公告)号：US20210313474A1

公开(公告)日：2021-10-07

申请号：US17348188

申请日：2021-06-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kohei Ebisuno ,  Sungjun Kim ,  Donghyun Son ,  Jaesoo Jung ,  Sunghoon Moon ,  Jingoo Jung

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12 ,  H01L21/02 ,  H01L21/306 ,  H01L29/66

Abstract: A thin film transistor includes an active layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a capping layer filling a thickness difference between the first portion and the second portion and arranged on the first portion, a gate insulating layer arranged on the capping layer, a gate electrode on the active layer, wherein the gate insulating layer and the capping layer are disposed between the gate electrode and the active layer, and a source electrode and a drain electrode connected to the active layer.