公开(公告)号：US20150090980A1

公开(公告)日：2015-04-02

申请号：US14457862

申请日：2014-08-12

Applicant: Samsung Display Co., Ltd.

Inventor： Wang Woo LEE ,  Moo Soon Ko ,  Min Woo Woo ,  II Jeong Lee ,  Jeong Ho Lee

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/786 ,  H01L51/56

CPC classification number: H01L27/3262 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/3258 ,  H01L27/3276 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78675

Abstract: An organic light-emitting diode (OLED) display having thin film transistors (TFTs) is disclosed. In one aspect, TFTs of the OLED display include a substrate and a first semiconductor layer formed over the substrate and including first channel, source, and drain regions and a lightly doped region between the first channel region and the first source and drain regions. The OLED display also includes a second semiconductor layer formed over the substrate and including second channel, source, and drain regions. The OLED display further includes first and second gate electrodes formed over the first semiconductor layer and a third gate electrode formed over the second semiconductor layer. The width of the second gate electrode is less than that of the first gate electrode and the lightly doped region overlaps a portion of the first gate electrode and does not overlap the second gate electrode.

Abstract translation: 公开了一种具有薄膜晶体管（TFT）的有机发光二极管（OLED）显示器。 一方面，OLED显示器的TFT包括衬底和形成在衬底上的第一半导体层，并且包括第一沟道，源极和漏极区以及在第一沟道区和第一源极和漏极区之间的轻掺杂区。 OLED显示器还包括形成在衬底上并包括第二通道，源极和漏极区域的第二半导体层。 OLED显示器还包括形成在第一半导体层上的第一和第二栅电极和形成在第二半导体层上的第三栅电极。 第二栅电极的宽度小于第一栅电极的宽度，并且轻掺杂区域与第一栅电极的一部分重叠，并且不与第二栅电极重叠。