公开(公告)号：US20160380113A1

公开(公告)日：2016-12-29

申请号：US15071182

申请日：2016-03-15

Applicant: Samsung Display Co., Ltd.

Inventor： Su-Hyoung KANG ,  Hyun-Gue KIM ,  Jong-Jun BAEK

IPC: H01L29/786 ,  G02F1/1343 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02

Abstract: A thin film transistor includes a substrate, a gate electrode disposed on the substrate, an active pattern disposed on the gate electrode, a source electrode electrically coupled to the active pattern and a drain electrode electrically coupled to the active pattern. The active pattern includes a first channel layer overlapping the source electrode and the drain electrode and a second channel layer overlapping the gate electrode. The second channel layer includes a plurality of high electron mobility regions. An electron mobility of each of the high electron mobility regions is greater than an electron mobility of the first channel layer.

Abstract translation: 薄膜晶体管包括衬底，设置在衬底上的栅电极，设置在栅电极上的有源图案，电耦合到有源图案的源电极和电耦合到有源图案的漏电极。 有源图案包括与源电极和漏电极重叠的第一沟道层和与栅电极重叠的第二沟道层。 第二沟道层包括多个高电子迁移率区域。 每个高电子迁移率区域的电子迁移率大于第一沟道层的电子迁移率。