公开(公告)号：US11957005B2

公开(公告)日：2024-04-09

申请号：US16937412

申请日：2020-07-23

Applicant: Samsung Display Co., Ltd.

Inventor： Seo Won Choe ,  Ki Wook Kim ,  Yang Wan Kim ,  Hyun Woong Kim ,  Eun Byul Jo

IPC: G09G3/32 ,  G09G3/3266 ,  H10K59/121 ,  H10K59/126 ,  H10K59/131 ,  H10K59/40 ,  G06F3/044

CPC classification number: H10K59/131 ,  G09G3/3266 ,  H10K59/1216 ,  H10K59/126 ,  H10K59/40 ,  G06F3/0446

Abstract: A display device includes: a substrate; scan lines extending in a first direction, and arranged along a second direction crossing the first direction on the substrate; data lines extending in the second direction, and arranged along the first direction on the substrate; a display area including pixels connected to the scan lines and the data lines; and a non-display area around the display area, and including compensation capacitors connected to some scan lines from among the scan lines. A sum of a capacitance of q odd scan lines or q even scan lines that are adjacent to each other from among the scan lines increases in the second direction, where q is a positive integer.

公开(公告)号：US12268060B2

公开(公告)日：2025-04-01

申请号：US17400274

申请日：2021-08-12

Applicant: Samsung Display Co., LTD.

Inventor： Yoon Ho Kim ,  Jong Woo Park ,  June Hwan Kim ,  Tae Young Kim ,  Ki Ju Im ,  Eun Byul Jo

IPC: H10K59/126 ,  H01L29/66 ,  H01L29/786 ,  H10K59/12 ,  H10K59/124

Abstract: A display device includes a substrate, a first semiconductor layer on the substrate and including an oxide semiconductor, a first gate insulating film on the first semiconductor layer, a first conductive layer on the first gate insulating film, a first interlayer insulating film on the first conductive layer, and a second conductive layer on the first interlayer insulating film and connected to the first semiconductor layer through a through-hole. The through-hole includes a first through-hole passing through the first interlayer insulating film, and a second through-hole overlapping the first through-hole and passing through the first semiconductor layer. The second conductive layer is in contact with a side surface of the first semiconductor layer exposed at the second through-hole.