公开(公告)号：US20160005616A1

公开(公告)日：2016-01-07

申请号：US14752267

申请日：2015-06-26

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun-Min CHO ,  Dong-Il KIM

IPC: H01L21/308 ,  G02F1/1368 ,  H01L21/311 ,  G02F1/1362 ,  H01L29/786 ,  H01L29/66

Abstract: A thin film transistor substrate includes a gate electrode arranged on a substrate, a gate insulation layer arranged on the gate electrode, an active pattern arranged on the gate insulation layer, a source electrode overlapping a first end portion of the active pattern, and a drain electrode overlapping a second and opposite end portion of the active pattern. A fluorocarbon-like material is arranged on one or more of surfaces of at least one of the active pattern, the source electrode and the drain electrode, and on a photoresist pattern used in the formation process of the thin film substrate. The fluorocarbon-like material on the photoresist pattern serves to maintain a shape and size of the photoresist pattern during subsequent patterning processes.

Abstract translation: 薄膜晶体管基板包括布置在基板上的栅电极，布置在栅电极上的栅极绝缘层，布置在栅极绝缘层上的有源图案，与有源图案的第一端部重叠的源电极和漏极 电极与活性图案的第二和相对端部重叠。 活性图案，源电极和漏电极中的至少一个表面的一个或多个表面上以及在薄膜基板的形成工艺中使用的光致抗蚀剂图案上布置碳氟化合物材料。 光致抗蚀剂图案上的碳氟化合物材料用于在随后的图案化工艺期间保持光致抗蚀剂图案的形状和尺寸。