公开(公告)号：US20220246705A1

公开(公告)日：2022-08-04

申请号：US17450504

申请日：2021-10-11

Applicant: Samsung Display Co., Ltd.

Inventor： TAE-YOUNG CHOI ,  SEUNG-HWAN CHO ,  BYOUNGTAEK SON

IPC: H01L27/32

Abstract: A transistor may include an active layer including a first end area, a middle area adjacent to the first end area, and a second end area spaced from the first end area by the middle area, a first electrode on the active layer, overlapping the first end area, and connected to the first end area through a first contact hole, an upper gate electrode on the active layer, overlapping the middle area, at a same layer as the first electrode, and to receive a gate signal and a lower gate electrode under the active layer, overlapping the first contact hole and the middle area, and to receive the gate signal.