公开(公告)号：US20240266354A1

公开(公告)日：2024-08-08

申请号：US18424907

申请日：2024-01-29

Applicant: Samsung Display Co., Ltd.

Inventor： KEUNWOO KIM ,  DOO-NA KIM ,  SANGSUB KIM ,  BUMMO SUNG ,  SANGGUN CHOI

IPC: H01L27/12

CPC classification number: H01L27/1222 ,  H01L27/124 ,  H01L27/1255

Abstract: A display device includes: a substrate, a first active pattern disposed on the substrate and including a first channel region, a second channel region spaced apart from each other, and a first common conductive region positioned between the first channel region and the second channel region, a second active pattern disposed on the substrate, spaced apart from the first active pattern, and including a third channel region, a fourth channel region spaced apart from each other, and a second common conductive region positioned between the third channel region and the fourth channel region, a first gate layer disposed on the first and second active patterns and including a first electrode overlapping the first active pattern, and a second gate layer disposed on the first gate layer and including a second electrode overlapping the second active pattern.

公开(公告)号：US20210343821A1

公开(公告)日：2021-11-04

申请号：US17158362

申请日：2021-01-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JAEHWAN CHU ,  KEUNWOO KIM ,  TAEWOOK KANG ,  DOONA KIM ,  SANGSUB KIM ,  BUMMO SUNG ,  DOKYEONG LEE ,  YONGSU LEE

IPC: H01L27/32 ,  G09G3/3233

Abstract: An organic light-emitting display apparatus includes an organic light-emitting diode, a driving transistor configured to control an amount of electric current flowing to the organic light-emitting diode from a power line, a compensation transistor configured to diode-connect the driving transistor in response to a voltage applied to first and second compensation gate electrodes of the compensation transistor, and a gate insulating layer between the compensation gate electrodes and a compensation active region of a compensation transistor. A layer structure of the gate insulating layer between the first compensation gate electrode and the compensation active region is different from a layer structure of the gate insulating layer between the second compensation gate electrode and the compensation active region.