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公开(公告)号：US11133364B2
公开(公告)日：2021-09-28
申请号：US16681488
申请日：2019-11-12
IPC分类号： H01L27/32 , H01L27/12 , H01L29/786 , H01L29/66 , G09G3/3233
摘要： A light emitting diode display device includes a substrate, a first layer disposed on the substrate, a first transistor disposed on the first layer and including a first gate electrode, and a light emitting diode connected to the first transistor, wherein the first layer may overlap the first gate electrode, and may include a first region including a first material and a second region including a second material different from the first material, the first material may include amorphous silicon doped with impurities, and the second material may include amorphous silicon.
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公开(公告)号：US10199405B2
公开(公告)日：2019-02-05
申请号：US15671638
申请日：2017-08-08
发明人： Joon-Hwa Bae , Byoung Kwon Choo , Byung Hoon Kang , Woo Jin Cho , Hyun Jin Cho , Jun Hyuk Cheon , Jee-Hyun Lee
IPC分类号： H01L27/12 , H01L21/02 , H01L29/786 , H01L21/306 , H01L21/3105 , H01L21/321 , H01L29/66 , H01L21/768
摘要： A method of manufacturing a transistor display panel and a transistor display panel, the method including forming a polycrystalline silicon layer on a substrate; forming an active layer by patterning the polycrystalline silicon layer; forming a first insulating layer covering the substrate and the active layer; exposing the active layer by polishing the first insulating layer using a polishing apparatus; and forming a second insulating layer that contacts the first insulating layer and the active layer, wherein exposing the active layer by polishing the first insulating layer includes coating a first slurry on a surface of the first insulating layer, the first slurry reducing a polishing rate of the active layer.
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