公开(公告)号：US12087231B2

公开(公告)日：2024-09-10

申请号：US18466047

申请日：2023-09-13

Applicant: Samsung Display Co., LTD.

Inventor： Jae Hyun Park ,  Hyeon Sik Kim ,  Hye Seok Na

IPC: G09G3/3266 ,  G09G3/32

CPC classification number: G09G3/3266 ,  G09G3/32 ,  G09G2310/0267 ,  G09G2330/06

Abstract: A design for a scan driver and a display device including the scan driver that is more resilient to electrostatic discharge. Thin film transistors within a stage are designed differently depending on whether or not a gate of the transistor is connected to an external source. Transistors whose gate is connected to an external source is specially designed to withstand electrostatic discharge applied to the gate thereof by one or more of increasing a number of channel areas, decreasing a length of an ohmic bridge, including a resistive element to the gate, decreasing a width of a channel areas, and increasing a width of the active layer.