公开(公告)号：US20240169918A1

公开(公告)日：2024-05-23

申请号：US18448817

申请日：2023-08-11

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo KIM ,  Hye Na KWAK ,  Chan Yeob SEOL ,  Bum Mo SUNG ,  Ji Yeong SHIN

IPC: G09G3/3233 ,  G09G3/3291

CPC classification number: G09G3/3233 ,  G09G3/3291

Abstract: A display device includes: a light emitting element on a substrate; a third-first transistor and a third-second transistor connected in series between a gate electrode of the first transistor and a drain electrode of the first transistor; a first metal layer on the substrate and comprising a gate electrode of the third-first transistor and a gate electrode of the third-second transistor; a hydrogen passivation layer on the first metal layer; a semiconductor region of each of a first transistor, the third-first transistor, and the third-second transistor on the hydrogen passivation layer; a gate electrode on the capping layer; a first bias electrode on a same layer as the gate electrode of the first transistor and overlapping the semiconductor region of the third-first transistor; and a second bias electrode on a same layer as the first bias electrode and overlapping the semiconductor region of the third-second transistor.

公开(公告)号：US20250095582A1

公开(公告)日：2025-03-20

申请号：US18966105

申请日：2024-12-02

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Keun Woo KIM ,  Hye Na KWAK ,  Chan Yeob SEOL ,  Bum Mo SUNG ,  Ji Yeong SHIN

IPC: G09G3/3233 ,  G09G3/3291

Abstract: A display device includes: a light emitting element on a substrate; a third-first transistor and a third-second transistor connected in series between a gate electrode of the first transistor and a drain electrode of the first transistor; a first metal layer on the substrate and comprising a gate electrode of the third-first transistor and a gate electrode of the third-second transistor; a hydrogen passivation layer on the first metal layer; a semiconductor region of each of a first transistor, the third-first transistor, and the third-second transistor on the hydrogen passivation layer; a gate electrode on the capping layer; a first bias electrode on a same layer as the gate electrode of the first transistor and overlapping the semiconductor region of the third-first transistor; and a second bias electrode on a same layer as the first bias electrode and overlapping the semiconductor region of the third-second transistor.

公开(公告)号：US20240121984A1

公开(公告)日：2024-04-11

申请号：US18455832

申请日：2023-08-25

Applicant: Samsung Display Co., LTD.

Inventor： Han Bit KIM ,  Keun Woo KIM ,  Doo Na KIM ,  Sang Sub KIM ,  Chan Yeob SEOL ,  Jae Hwan CHU ,  Sang Gun CHOI

IPC: H10K59/121 ,  H10K59/131

CPC classification number: H10K59/1213 ,  H10K59/131

Abstract: A display device including a pixel electrode, and a pixel circuit electrically connected to the pixel electrode. The pixel circuit includes a first transistor including sub-transistors electrically connected to each other through a first common node, a second transistor including sub-transistors electrically connected to each other through a second common node, a first electrode electrically connecting the first common node with the second common node, and a second electrode disposed to overlap the first electrode and electrically connected to a direct current power source.