公开(公告)号：US20230019484A1

公开(公告)日：2023-01-19

申请号：US17861329

申请日：2022-07-11

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Lia MASOERO ,  Patrick CALENZO

IPC: H01L27/112

Abstract: A one-time programmable memory cell includes a transistor coupled to a capacitor. The transistor includes at least one first conductive gate element arranged in at least one first trench formed in a semiconductor substrate, and at least one first channel portion buried in the substrate and extending at the level of at least a first lateral surface of the at least one first conductive gate element. The capacitor includes a capacitive element forming a memory. The at least one first channel portion is electrically coupled to an electrode of the capacitive element.