公开(公告)号：US20180076250A1

公开(公告)日：2018-03-15

申请号：US15263922

申请日：2016-09-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sebastien Lagrasta ,  Delia Ristoiu ,  Jean-Pierre Oddou ,  Cécile Jenny

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14654 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor substrate includes a photodiode region, a charge storage region electrically coupled to the photodiode region and a capacitive deep trench isolation (CDTI) structure including a conductive region positioned between the photodiode region and the charge storage region. A contact etch stop layer overlies the semiconductor substrate and a premetallization dielectric layer overlies the contact etch stop layer. A first trench, filled with a metal material, extends through the premetallization dielectric layer and bottoms out at or in the contact etch stop layer. A second trench, also filled with the metal material, extends through the premetallization dielectric layer and the contact etch stop layer and bottoms out at or in the conductive region of the CDTI structure. The metal filled first trench forms an optical shield between the photodiode region and the charge storage region. The metal filled second trench forms a contact for biasing the CDTI structure.

公开(公告)号：US10128295B2

公开(公告)日：2018-11-13

申请号：US15866995

申请日：2018-01-10

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sebastien Lagrasta ,  Delia Ristoiu ,  Jean-Pierre Oddou ,  Cécile Jenny

IPC: H01L27/146

Abstract: A semiconductor substrate includes a photodiode region, a charge storage region electrically coupled to the photodiode region and a capacitive deep trench isolation (CDTI) structure including a conductive region positioned between the photodiode region and the charge storage region. A contact etch stop layer overlies the semiconductor substrate and a premetallization dielectric layer overlies the contact etch stop layer. A first trench, filled with a metal material, extends through the premetallization dielectric layer and bottoms out at or in the contact etch stop layer. A second trench, also filled with the metal material, extends through the premetallization dielectric layer and the contact etch stop layer and bottoms out at or in the conductive region of the CDTI structure. The metal filled first trench forms an optical shield between the photodiode region and the charge storage region. The metal filled second trench forms a contact for biasing the CDTI structure.

公开(公告)号：US20180158861A1

公开(公告)日：2018-06-07

申请号：US15866995

申请日：2018-01-10

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sebastien Lagrasta ,  Delia Ristoiu ,  Jean-Pierre Oddou ,  Cécile Jenny

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14654 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor substrate includes a photodiode region, a charge storage region electrically coupled to the photodiode region and a capacitive deep trench isolation (CDTI) structure including a conductive region positioned between the photodiode region and the charge storage region. A contact etch stop layer overlies the semiconductor substrate and a premetallization dielectric layer overlies the contact etch stop layer. A first trench, filled with a metal material, extends through the premetallization dielectric layer and bottoms out at or in the contact etch stop layer. A second trench, also filled with the metal material, extends through the premetallization dielectric layer and the contact etch stop layer and bottoms out at or in the conductive region of the CDTI structure. The metal filled first trench forms an optical shield between the photodiode region and the charge storage region. The metal filled second trench forms a contact for biasing the CDTI structure.

公开(公告)号：US09917126B1

公开(公告)日：2018-03-13

申请号：US15263922

申请日：2016-09-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sebastien Lagrasta ,  Delia Ristoiu ,  Jean-Pierre Oddou ,  Cécile Jenny

IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14654 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor substrate includes a photodiode region, a charge storage region electrically coupled to the photodiode region and a capacitive deep trench isolation (CDTI) structure including a conductive region positioned between the photodiode region and the charge storage region. A contact etch stop layer overlies the semiconductor substrate and a premetallization dielectric layer overlies the contact etch stop layer. A first trench, filled with a metal material, extends through the premetallization dielectric layer and bottoms out at or in the contact etch stop layer. A second trench, also filled with the metal material, extends through the premetallization dielectric layer and the contact etch stop layer and bottoms out at or in the conductive region of the CDTI structure. The metal filled first trench forms an optical shield between the photodiode region and the charge storage region. The metal filled second trench forms a contact for biasing the CDTI structure.