Semiconductor Device and Method Using an EMI-Absorbing Metal Bar

    公开(公告)号:US20230326872A1

    公开(公告)日:2023-10-12

    申请号:US17658240

    申请日:2022-04-06

    CPC classification number: H01L23/552

    Abstract: A semiconductor device has a substrate. A first semiconductor die and second semiconductor die are disposed over the substrate. A metal bar has an EMI-absorbing material disposed over the metal bar. The metal bar is disposed over the substrate between the first semiconductor die and second semiconductor die. An encapsulant is deposited over the first semiconductor die, second semiconductor die, and metal bar. A shielding layer is formed over the encapsulant.

    Semiconductor device and method using an EMI-absorbing metal bar

    公开(公告)号:US12183687B2

    公开(公告)日:2024-12-31

    申请号:US17658240

    申请日:2022-04-06

    Abstract: A semiconductor device has a substrate. A first semiconductor die and second semiconductor die are disposed over the substrate. A metal bar has an EMI-absorbing material disposed over the metal bar. The metal bar is disposed over the substrate between the first semiconductor die and second semiconductor die. An encapsulant is deposited over the first semiconductor die, second semiconductor die, and metal bar. A shielding layer is formed over the encapsulant.

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