公开(公告)号：US12027647B2

公开(公告)日：2024-07-02

申请号：US17285848

申请日：2019-10-07

Applicant: STANLEY ELECTRIC CO., LTD.

Inventor： Toshiyuki Obata ,  Yasuhiro Hashimoto

IPC: H01L33/32 ,  H01L33/06

CPC classification number: H01L33/325 ,  H01L33/06

Abstract: A semiconductor light-emitting element according to the present invention includes an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a p-electrode. The n-type semiconductor layer has a composition of AlGaN or AlInGaN. The active layer is formed on the n-type semiconductor layer. The active layer contains an AlGaN semiconductor or an AlInGaN semiconductor. The p-type semiconductor layer is formed on the active layer. The p-type semiconductor layer has a composition of AlN, AlGaN, or AlInGaN. The p-electrode is formed on the p-type semiconductor layer. The p-type semiconductor layer includes a contact layer formed on the p-electrode. The contact layer includes an AlGaN layer or an AlInGaN layer in which a band gap decreases toward an interface with the p-electrode. The contact layer includes a tunneling contact layer in contact with the p-electrode. The tunneling contact layer is connected to the p-electrode by a tunnel junction.

公开(公告)号：US11990564B2

公开(公告)日：2024-05-21

申请号：US17285848

申请日：2019-10-07

Applicant: STANLEY ELECTRIC CO., LTD.

Inventor： Toshiyuki Obata ,  Yasuhiro Hashimoto

IPC: H01L33/32 ,  H01L33/06

CPC classification number: H01L33/325 ,  H01L33/06

Abstract: A semiconductor light-emitting element according to the present invention includes an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a p-electrode. The n-type semiconductor layer has a composition of AlGaN or AlInGaN. The active layer is formed on the n-type semiconductor layer. The active layer contains an AlGaN semiconductor or an AlInGaN semiconductor. The p-type semiconductor layer is formed on the active layer. The p-type semiconductor layer has a composition of AlN, AlGaN, or AlInGaN. The p-electrode is formed on the p-type semiconductor layer. The p-type semiconductor layer includes a contact layer formed on the p-electrode. The contact layer includes an AlGaN layer or an AlInGaN layer in which a band gap decreases toward an interface with the p-electrode. The contact layer includes a tunneling contact layer in contact with the p-electrode. The tunneling contact layer is connected to the p-electrode by a tunnel junction.