Semiconductor device and manufacturing method, and electronic appliance

    公开(公告)号:US10199419B2

    公开(公告)日:2019-02-05

    申请号:US15546138

    申请日:2016-02-22

    申请人: SONY CORPORATION

    IPC分类号: H01L27/146 H01L23/00

    摘要: There is provided a semiconductor device including: a plurality of bumps (13) on a first semiconductor substrate (11); and a lens material (57) in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.

    Semiconductor device and manufacturing method, and electronic appliance

    公开(公告)号:US10707259B2

    公开(公告)日:2020-07-07

    申请号:US16242764

    申请日:2019-01-08

    申请人: SONY CORPORATION

    IPC分类号: H01L27/146 H01L23/00

    摘要: There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.

    Semiconductor device and manufacturing method, and electronic appliance

    公开(公告)号:US11322539B2

    公开(公告)日:2022-05-03

    申请号:US16891995

    申请日:2020-06-03

    申请人: SONY CORPORATION

    摘要: There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.