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公开(公告)号:US10199419B2
公开(公告)日:2019-02-05
申请号:US15546138
申请日:2016-02-22
申请人: SONY CORPORATION
发明人: Jun Ogi , Junichiro Fujimagari , Susumu Inoue , Atsushi Fujiwara
IPC分类号: H01L27/146 , H01L23/00
摘要: There is provided a semiconductor device including: a plurality of bumps (13) on a first semiconductor substrate (11); and a lens material (57) in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.
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公开(公告)号:US10707259B2
公开(公告)日:2020-07-07
申请号:US16242764
申请日:2019-01-08
申请人: SONY CORPORATION
发明人: Jun Ogi , Junichiro Fujimagari , Susumu Inoue , Atsushi Fujiwara
IPC分类号: H01L27/146 , H01L23/00
摘要: There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.
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公开(公告)号:US11322539B2
公开(公告)日:2022-05-03
申请号:US16891995
申请日:2020-06-03
申请人: SONY CORPORATION
发明人: Jun Ogi , Junichiro Fujimagari , Susumu Inoue , Atsushi Fujiwara
IPC分类号: H01L31/18 , H01L27/146 , H01L23/00
摘要: There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.
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