公开(公告)号：US20230238335A1

公开(公告)日：2023-07-27

申请号：US17850149

申请日：2022-06-27

申请人： SK hynix Inc.

发明人： Won Sun SEO

IPC分类号： H01L23/00 ,  H01L23/58

CPC分类号： H01L23/562 ,  H01L23/585

摘要： A semiconductor chip includes an integrated circuit disposed in a device region, and a chip guard disposed in a chip sealing region that is an outer portion of the device region. The chip guard includes a first metal layer disposed over a substrate, an interlayer insulating layer disposed on the first metal layer, a second metal layer disposed on the interlayer insulating layer, and a barrier pattern extending in a direction towards the substrate from the second metal layer through the interlayer insulating layer. The barrier pattern is disposed to be spaced apart from the first metal layer.