SURFACE TREATMENT METHOD FOR SEMICONDUCTOR DEVICE
    1.
    发明申请
    SURFACE TREATMENT METHOD FOR SEMICONDUCTOR DEVICE 审中-公开
    半导体器件的表面处理方法

    公开(公告)号:US20140179118A1

    公开(公告)日:2014-06-26

    申请号:US13843594

    申请日:2013-03-15

    申请人: SK HYNIX INC.

    IPC分类号: H01L21/02

    摘要: A surface treatment method for a semiconductor device includes providing a substrate where a plurality of projected patterns are formed, forming a hydrophobic coating layer on a surface of each of the plurality of projected patterns, rinsing the substrate with deionized water, and drying the substrate, wherein the hydrophobic coating layer is formed using a coating agent that includes phosphate having more than one hydrocarbon group, phosphonate having more than one hydrocarbon group, or a mixture thereof.

    摘要翻译: 用于半导体器件的表面处理方法包括提供形成多个突出图案的基板,在多个突出图案的每一个的表面上形成疏水涂层,用去离子水冲洗基板,并干燥基板, 其中所述疏水涂层使用包括具有多于一个烃基的磷酸酯,具有多于一个烃基的膦酸酯或其混合物的包衣剂形成。