公开(公告)号：US20220359643A1

公开(公告)日：2022-11-10

申请号：US17517527

申请日：2021-11-02

Applicant: SK hynix Inc.

Inventor： Kwan Woo DO ,  Wan Joo MAENG ,  Jeong Yeop LEE ,  Ki Vin IM

IPC: H01L49/02 ,  H01G4/008 ,  H01G4/10

Abstract: Embodiments of the present invention provide a semiconductor device capable of improving current leakage property and a method for fabricating the same. According to an embodiment of the present invention, a capacitor comprises: a lower electrode; a dielectric layer over the lower electrode; and an upper electrode over the dielectric layer, the upper electrode including a conductive carbon-containing layer, wherein a carbon content in the conductive carbon-containing layer is more than 5 at % and equal to or less than 10 at %.

公开(公告)号：US20250081482A1

公开(公告)日：2025-03-06

申请号：US18954537

申请日：2024-11-21

Applicant: SK hynix Inc.

Inventor： Kwan Woo DO ,  Wan Joo MAENG ,  Jeong Yeop LEE ,  Ki Vin IM

IPC: H01G4/10 ,  H01G4/008

Abstract: Embodiments of the present invention provide a semiconductor device capable of improving current leakage property and a method for fabricating the same. According to an embodiment of the present invention, a capacitor comprises: a lower electrode; a dielectric layer over the lower electrode; and an upper electrode over the dielectric layer, the upper electrode including a conductive carbon-containing layer, wherein a carbon content in the conductive carbon-containing layer is more than 5 at % and equal to or less than 10 at %.

公开(公告)号：US20250169154A1

公开(公告)日：2025-05-22

申请号：US18928190

申请日：2024-10-28

Applicant: SK hynix Inc.

Inventor： Kwan Woo DO ,  Hyung Keun KIM ,  Ye Cheon CHO ,  Jae Sang LEE

IPC: H01L29/49 ,  H01L29/423

Abstract: A semiconductor device includes a trench formed in a substrate, a gate insulation layer formed to contact a bottom surface and sidewall surfaces of the trench, a first electrode layer formed to contact the gate insulation layer, the first electrode layer comprising titanium, a second electrode layer formed to contact the first electrode layer, the second electrode layer comprising molybdenum and titanium, and a third electrode layer formed to contact the second electrode layer.