公开(公告)号：US11121033B2

公开(公告)日：2021-09-14

申请号：US16573047

申请日：2019-09-17

申请人： SK hynix Inc.

发明人： Ki-Hong Yang ,  Ki-Hong Lee

IPC分类号： H01L21/768 ,  H01L27/1157

摘要： A method for fabricating a semiconductor device includes forming a through-hole penetrating through an alternating stack pattern and forming a gap-fill layer, wherein a sacrificial gap-fill layer of the gap-fill layer fills the through-hole. The method also includes forming a mask layer over the alternating stack pattern and over the gap-fill layer, wherein the mask layer includes a self-aligned opening overlapping the filled through-hole and overlapping a portion of an uppermost material layer of the alternating stack pattern adjacent to the filled through-hole. The method further includes forming a first contact hole through the alternating stack pattern by performing a single etch using both the mask layer and the portion of the uppermost material layer as etch barriers to remove, through the self-aligned opening, the sacrificial gap-fill layer filling the through-hole.

公开(公告)号：US11817351B2

公开(公告)日：2023-11-14

申请号：US17404609

申请日：2021-08-17

申请人： SK hynix Inc.

发明人： Ki-Hong Yang ,  Ki-Hong Lee

IPC分类号： H01L21/54 ,  H01L23/31 ,  H01L23/24 ,  H01L23/29 ,  H01L25/07 ,  H01L21/768 ,  H10B43/35

CPC分类号： H01L21/76897 ,  H01L21/76805 ,  H01L21/76808 ,  H01L21/76877 ,  H01L2221/1026 ,  H10B43/35

摘要： A method for fabricating a semiconductor device includes forming a through-hole penetrating through an alternating stack pattern and forming a gap-fill layer, wherein a sacrificial gap-fill layer of the gap-fill layer fills the through-hole. The method also includes forming a mask layer over the alternating stack pattern and over the gap-fill layer, wherein the mask layer includes a self-aligned opening overlapping the filled through-hole and overlapping a portion of an uppermost material layer of the alternating stack pattern adjacent to the filled through-hole. The method further includes forming a first contact hole through the alternating stack pattern by performing a single etch using both the mask layer and the portion of the uppermost material layer as etch barriers to remove, through the self-aligned opening, the sacrificial gap-fill layer filling the through-hole.