公开(公告)号：US12283307B2

公开(公告)日：2025-04-22

申请号：US18063007

申请日：2022-12-07

Applicant: SK hynix Inc.

Inventor： Jae Yong Son ,  Nam Kyeong Kim ,  Hoon Cho ,  Hyuk Min Kwon ,  Dae Sung Kim ,  Jang Seob Kim ,  Sang Ho Yun

IPC: G11C11/56 ,  G11C11/4078 ,  G11C11/408 ,  G11C11/4096

Abstract: A storage device includes a memory including a plurality of word lines, a plurality of bit lines and a plurality of memory cells, and a controller configured to control the memory and perform a read retry operation for the memory using a read retry table. The memory includes a special block that stores a read retry table in which a plurality of read retry values are set for each of a plurality of first conditions and each of a plurality of second conditions corresponding to each of the plurality of first conditions.