公开(公告)号：US12060652B2

公开(公告)日：2024-08-13

申请号：US17310565

申请日：2019-11-27

申请人： SINO NITRIDE SEMICONDUCTOR CO., LTD.

发明人： Ye Huang ,  Peng Liu ,  Jianhui Wang ,  Jingquan Lu

IPC分类号： C30B29/40 ,  C30B25/14

CPC分类号： C30B29/40 ,  C30B25/14

摘要： A linear showerhead for growing GaN, including a first gas base, a second gas base, and a third gas base. First central gas passages are disposed in the middle of the first gas base. A first gap is disposed between two adjacent first central gas passages. A first nozzle is disposed at the bottom of a first central gas passage. The second gas base is disposed on the first gas base. Second central gas passages are disposed in the middle of the second gas base. A second gap is disposed between two adjacent second central gas passages. Two sides of a second central gas passage are provided with a second nozzle. The third gas base includes third central gas passages. A third central gas passage penetrates a first gap and a second gap. A third nozzle is disposed at the bottom of a third central gas passage.