摘要:
A magnetic recording medium 11 in which the outermost surface of a protective layer 3 on a lubricant layer 4 side contains carbon and nitrogen of 10 atomic % to 90 atomic %, the lubricant layer 4 is formed by being in contact with the outermost surface, and contains a compound A of Formula (1) and a compound B of Formula (2), a mass ratio (A/B) of the compound A with respect to the compound B is 0.2 to 0.3, the average molecular weights of the compounds A and B are 1,500 to 2,000 and 1,300 to 2,400, respectively, and the average film thickness is 0.5 nm to 2 nm. R1-C6H4OCH2CH(OH)CH2OCH2—R2-CH2OCH2CH(OH)CH2OH (1) (R1 is an alkoxy group having 1 to 4 carbon atoms. R2 is —CF2O(CF2CF2O)x(CF2O)yCF2—.) HOCH2CF2CF2O(CF2CF2CF2O)mCF2CF2CH2OCH2CH(OH)CH2OH (2)
摘要:
A method of manufacturing a magnetic sensor includes: a soft magnetic material layer deposition process depositing a soft magnetic material layer (101) constituting a sensitive part (21) sensing a magnetic field on a substrate (10) by magnetron sputtering; and a sensitive part formation process forming the sensitive part (21) sensing the magnetic field in a portion of the soft magnetic material layer (101) where uniaxial magnetic anisotropy is provided by a magnetic field used for magnetron sputtering of the soft magnetic material layer (101).
摘要:
A magnetic sensor 1 includes: a non-magnetic substrate 10; and a sensitive element 30 disposed on the substrate 10. The sensitive element 30 has a longitudinal direction and a transverse direction and has a uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction. The sensitive element 30 is configured to sense a magnetic field by a magnetic impedance effect. The sensitive element 30 includes a soft magnetic material layer 101 made of an amorphous alloy based on Co and having a saturation magnetization of greater than or equal to 300 emu/cc and less than or equal to 650 emu/cc.
摘要:
A magnetic sensor (1) includes: a nonmagnetic substrate (10); and a sensitive element (31) including a plurality of soft magnetic layers (105) (lower soft magnetic layer (105a) and upper soft magnetic layer (105b)) laminated on or above the substrate (10) and a conductor layer (106) laminated between the plurality of soft magnetic layers (105) and having higher conductivity than the plurality of soft magnetic layers (105). The sensitive element (31) has a longitudinal direction and a transverse direction and has uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction. The sensitive element (31) is configured to sense a magnetic field by a magnetic impedance effect.
摘要:
A piezoelectric film including a piezoelectric body configured to extract radio waves of a required frequency by resonance is provided. The piezoelectric body is based on either of ScAlN or AlN, and an X-ray rocking curve full-width at half-maximum (FWHM) of the piezoelectric body in a lattice plane with a Miller index of (11-20) is not more than 10°.
摘要:
A magnetic sensor includes: a sensitive layer made of a soft magnetic material with uniaxial magnetic anisotropy, the sensitive layer being configured to sense a magnetic field by a magnetic impedance effect; and a magnet layer made of a magnetized hard magnetic material and disposed to face the sensitive layer. The magnet layer is configured to apply a DC magnetic bias Hb in a direction intersecting a direction of the uniaxial magnetic anisotropy in the sensitive layer, the DC magnetic bias Hb having a greater value than an anisotropic magnetic field Hk of the sensitive layer.
摘要:
A magnetic sensor includes: plural sensitive elements 31 each including a soft magnetic material layer 105 having a longitudinal direction and a transverse direction and a conductor layer having higher conductivity than the soft magnetic material layer 105 and extending through the soft magnetic material layer 105 in a longitudinal direction, the sensitive element 31 having uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction and being configured to sense a magnetic field by a magnetic impedance effect; and a connecting portion 32 continuous with the conductor layer of the sensitive element and configured to connect transversely adjacent sensitive elements 31 in series.
摘要:
It is aimed at improving sensitivity of a magnetic sensor using the magnetic impedance effect. A magnetic sensor includes: a non-magnetic substrate; and a sensitive element including a soft magnetic material layer composed of an amorphous alloy with an initial magnetic permeability of 5,000 or more, the soft magnetic material layer being provided on the substrate, having a longitudinal direction and a short direction, being provided with uniaxial magnetic anisotropy in a direction crossing the longitudinal direction, and sensing a magnetic field by a magnetic impedance effect.
摘要:
A magnetic sensor 1 includes: a thin film magnet 20 which is constituted by a hard magnetic material layer 103 and has magnetic anisotropy in an in-plane direction; and a sensitive part 30 including a sensitive element 31 sensing a magnetic field by a magnetic impedance effect, the sensitive element 31 being constituted by a soft magnetic material layer 105 laminated on the hard magnetic material layer 103, having a longitudinal direction and a short direction, and having uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction, in which the longitudinal direction faces in the direction of a magnetic field generated by the thin film magnet 20. The thin film magnet 20 and the sensitive element 31 are provided to constitute a magnetic circuit with a facing member provided outside to face one of magnetic poles of the thin film magnet 20.
摘要:
The present invention relates to a magnetic recording medium in which a lubricant layer contains a compound A represented by general formula (1) and a compound B represented by general formula (2), satisfying (A/B)=0.2 to 3.0, and has an average thickness of 0.8 nm to 2 nm. R1—C6H4OCH2CH(OH)CH2OCH2—R2—CH2OCH2CH(OH)CH2OH . . . (1) (R1 is an alkoxy group having 1 to 4 carbon atoms. R2 is —CF2O(CF2CF2O)x(CF2O)yCF2— (x, y=0 to 15), —CF2CF2O(CF2CF2CF2O)zCF2CF2— (z=1 to 15), —CF2CF2CF2O(CF2CF2CF2CF2)nCF2CF2CF2— (n=0 to 4). HOCH2CF2CF2O(CF2CF2CF2O)mCF2CF2CH2OCH2CH(OH)CH2OH . . . (2) (m is an integer).