公开(公告)号：US09653037B2

公开(公告)日：2017-05-16

申请号：US14436148

申请日：2013-10-07

申请人： Sharp Kabushiki Kaisha

发明人： Takao Imaoku ,  Iori Aoyama ,  Tsuyoshi Inoue ,  Hiroyuki Moriwaki ,  Eiji Satoh

IPC分类号： G09G3/36 ,  G02F1/19 ,  G02F1/17

CPC分类号： G09G3/3696 ,  G02F1/172 ,  G02F1/19 ,  G02F2201/124 ,  G09G3/3651 ,  G09G2320/0233

摘要： An optical device (100) includes a first substrate (10) and a second substrate (20), and an optical layer (30) interposed therebetween. The first substrate includes a first electrode (11) and a second electrode (12), and the second substrate includes a third electrode (21). The optical layer contains a medium (31) and anisotropically-shaped particles (32) whose alignment direction changes in accordance with the direction of an electric field applied to the optical layer. The first electrode and the second electrode, which are interdigitated electrodes, are disposed so that their respective branches (11a, 12a) mesh with one another via a predetermined interspace. The relationships w1

公开(公告)号：US20150126019A1

公开(公告)日：2015-05-07

申请号：US14401158

申请日：2013-06-17

申请人： Sharp Kabushiki Kaisha

发明人： Tsuyoshi Inoue

IPC分类号： H01L27/12 ,  H01L21/768

CPC分类号： H01L27/1244 ,  G02F1/136204 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L21/76837 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1288

摘要： A gate line is formed on a pixel region, and a plurality of wiring layers are formed on a frame region. Next, a gate insulating layer and a semiconductor material layer are formed to cover the wiring layers and the gate line. Next, a first resist is formed to cover a portion of the semiconductor material layer over the pixel region, and second resists are formed to individually cover portions of the gate insulating layer between adjacent pairs of the wiring layers. Next, portions of the semiconductor material layer exposed from the first and second resists and are etched by dry etching to form semiconductor layers of semiconductor elements.

摘要翻译： 栅极线形成在像素区域上，并且多个布线层形成在框架区域上。 接下来，形成栅极绝缘层和半导体材料层以覆盖布线层和栅极线。 接下来，形成第一抗蚀剂以覆盖像素区域上的半导体材料层的一部分，并且形成第二抗蚀剂以分别覆盖相邻的布线层对之间的栅极绝缘层的部分。 接下来，半导体材料层的部分从第一和第二抗蚀剂暴露出来并通过干蚀刻进行蚀刻以形成半导体元件的半导体层。

公开(公告)号：US10711338B2

公开(公告)日：2020-07-14

申请号：US15779102

申请日：2017-01-26

申请人： Sharp Kabushiki Kaisha

发明人： Shinichi Kawato ,  Manabu Niboshi ,  Eiji Koike ,  Satoshi Inoue ,  Tsuyoshi Inoue ,  Yuhki Kobayashi

IPC分类号： H01L51/56 ,  C23C14/04 ,  C23C14/24 ,  H01L51/00

摘要： A vapor deposition mask including a metallic substrate provided with a plurality of openings for passing vapor deposition particles, wherein at least a portion of the plurality of openings are structured by one or more opening groups in which the plurality of openings are repeatedly arranged in accordance with a constant rule, and a plurality of protrusions of identical height are arranged to support the entire substrate from one side, and are provided only outside the opening group formation region.

公开(公告)号：US20140233261A1

公开(公告)日：2014-08-21

申请号：US14347131

申请日：2012-09-20

申请人： Sharp Kabushiki Kaisha

发明人： Hiroyuki Moriwaki ,  Kazutaka Hanaoka ,  Kazuki Kobayashi ,  Kenya Ito ,  Tsuyoshi Inoue

IPC分类号： F21V8/00

CPC分类号： G02B6/0078 ,  G09F13/04

摘要： A display device (100) includes: a display panel (110) having a display area where an image is displayed; a light guide member (150) that has an inner side face (150a) set at an 80 to 110° angle θ to the surface of the display panel (110) and that guides light from the periphery of the display panel (110) to outside of the display area; and a mirror (160) that covers the inner side face (150a) of the light guide member (150).

摘要翻译： 显示装置（100）包括：显示面板（110），具有显示图像的显示区域; 导光构件（150），其具有设置在80°至110°角的内侧面（150a）; 到所述显示面板（110）的表面，并且将来自所述显示面板（110）的周边的光引导到所述显示区域的外部; 以及覆盖导光构件（150）的内侧面（150a）的反射镜（160）。

公开(公告)号：US20150287380A1

公开(公告)日：2015-10-08

申请号：US14436148

申请日：2013-10-07

申请人： SHARP KABUSHIKI KAISHA

发明人： Takao Imaoku ,  Iori Aoyama ,  Tsuyoshi Inoue ,  Hiroyuki Moriwaki ,  Eiji Satoh

IPC分类号： G09G3/36

CPC分类号： G09G3/3696 ,  G02F1/172 ,  G02F1/19 ,  G02F2201/124 ,  G09G3/3651 ,  G09G2320/0233

摘要： An optical device (100) includes a first substrate (10) and a second substrate (20), and an optical layer (30) interposed therebetween. The first substrate includes a first electrode (11) and a second electrode (12), and the second substrate includes a third electrode (21). The optical layer contains a medium (31) and anisotropically-shaped particles (32) whose alignment direction changes in accordance with the direction of an electric field applied to the optical layer. The first electrode and the second electrode, which are interdigitated electrodes, are disposed so that their respective branches (11a, 12a) mesh with one another via a predetermined interspace. The relationships w1

摘要翻译： 光学装置（100）包括第一基板（10）和第二基板（20），以及介于其间的光学层（30）。 第一基板包括第一电极（11）和第二电极（12），第二基板包括第三电极（21）。 光学层包含介质（31）和各向异性颗粒（32），其取向方向根据施加到光学层的电场的方向而变化。 作为交错电极的第一电极和第二电极被布置成使得它们各自的分支（11a，12a）经由预定的间隙彼此啮合。 满足关系w1

公开(公告)号：US09337215B2

公开(公告)日：2016-05-10

申请号：US14401158

申请日：2013-06-17

申请人： Sharp Kabushiki Kaisha

发明人： Tsuyoshi Inoue

IPC分类号： H01L21/027 ,  H01L27/12 ,  G02F1/1362 ,  H01L21/768

CPC分类号： H01L27/1244 ,  G02F1/136204 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L21/76837 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1288

摘要： A gate line is formed on a pixel region, and a plurality of wiring layers are formed on a frame region. Next, a gate insulating layer and a semiconductor material layer are formed to cover the wiring layers and the gate line. Next, a first resist is formed to cover a portion of the semiconductor material layer over the pixel region, and second resists are formed to individually cover portions of the gate insulating layer between adjacent pairs of the wiring layers. Next, portions of the semiconductor material layer exposed from the first and second resists and are etched by dry etching to form semiconductor layers of semiconductor elements.

摘要翻译： 栅极线形成在像素区域上，并且多个布线层形成在框架区域上。 接下来，形成栅极绝缘层和半导体材料层以覆盖布线层和栅极线。 接下来，形成第一抗蚀剂以覆盖像素区域上的半导体材料层的一部分，并且形成第二抗蚀剂以分别覆盖相邻的布线层对之间的栅极绝缘层的部分。 接下来，半导体材料层的部分从第一和第二抗蚀剂暴露出来并通过干蚀刻进行蚀刻以形成半导体元件的半导体层。