公开(公告)号：US08483516B2

公开(公告)日：2013-07-09

申请号：US13211195

申请日：2011-08-16

申请人： Shao-Yi Chien ,  Yi-Nung Liu ,  Yi-Chun Lin ,  Ling-Hsiu Huang

发明人： Shao-Yi Chien ,  Yi-Nung Liu ,  Yi-Chun Lin ,  Ling-Hsiu Huang

IPC分类号： G06K9/32 ,  G06K9/40 ,  H04N7/01 ,  H04N11/20

CPC分类号： G06T3/4053

摘要： A super resolution (SR) method or system with database-free texture synthesis is disclosed. An input image is up-sampled to result in an up-sampled image. It is determined whether the input image possesses a smooth region. Edges of the up-sampled image are enhanced, and the enhancing edges step is bypassed if the smooth region has been detected. The enhanced or unenhanced up-sampled image is texture synthesized by taking the input image as texture example, thereby resulting in a synthesized image.

摘要翻译： 公开了一种具有无数据库纹理合成的超分辨率（SR）方法或系统。 输入图像被上采样以产生上采样图像。 确定输入图像是否具有平滑区域。 如果已经检测到平滑区域，则上采样图像的边缘被增强，并且增强边缘步骤被旁路。 增强或未增强的上取样图像是通过将输入图像作为纹理示例合成的纹理，从而得到合成图像。

公开(公告)号：US20130051702A1

公开(公告)日：2013-02-28

申请号：US13216055

申请日：2011-08-23

申请人： SHAO-YI CHIEN ,  Yi-Nung Liu ,  Yi-Chun Lin ,  LING-HSIU HUANG

发明人： SHAO-YI CHIEN ,  Yi-Nung Liu ,  Yi-Chun Lin ,  LING-HSIU HUANG

IPC分类号： G06K9/32

CPC分类号： G06T3/4007 ,  G06T3/403

摘要： A direction-adaptive image upsampling system and method using double interpolation is disclosed. Each of double interpolation (DI) units with different interpolation functions receives an input image and generates a corresponding double-interpolated image and an associated double-interpolated difference. A decision unit receives the double-interpolated differences from the DI units for deciding the DI unit that has an optimal interpolation around a pixel under process. An adaptive selector selects the double-interpolated image associated with the DI unit having the optimal interpolation as an output image.

摘要翻译： 公开了一种使用双插值的方向自适应图像上采样系统和方法。 每个具有不同内插函数的双插补（DI）单元接收输入图像并产生相应的双插值图像和相关联的双插值差。 决定单元从DI单元接收双插值差，以决定在正在处理的像素周围具有最佳插值的DI单元。 自适应选择器选择与具有最佳内插的DI单元相关联的双插值图像作为输出图像。

公开(公告)号：US08842939B2

公开(公告)日：2014-09-23

申请号：US13216055

申请日：2011-08-23

申请人： Shao-Yi Chien ,  Yi-Nung Liu ,  Yi-Chun Lin ,  Ling-Hsiu Huang

发明人： Shao-Yi Chien ,  Yi-Nung Liu ,  Yi-Chun Lin ,  Ling-Hsiu Huang

IPC分类号： G06K9/32 ,  G06K9/46 ,  G06K9/40 ,  H04N7/01 ,  H04N11/20 ,  G06T3/40

CPC分类号： G06T3/4007 ,  G06T3/403

摘要： A direction-adaptive image upsampling system and method using double interpolation is disclosed. Each of double interpolation (DI) units with different interpolation functions receives an input image and generates a corresponding double-interpolated image and an associated double-interpolated difference. A decision unit receives the double-interpolated differences from the DI units for deciding the DI unit that has an optimal interpolation around a pixel under process. An adaptive selector selects the double-interpolated image associated with the DI unit having the optimal interpolation as an output image.

摘要翻译： 公开了一种使用双插值的方向自适应图像上采样系统和方法。 每个具有不同内插函数的双插补（DI）单元接收输入图像并产生相应的双插值图像和相关联的双插值差。 决定单元从DI单元接收双插值差，以决定在正在处理的像素周围具有最佳插值的DI单元。 自适应选择器选择与具有最佳内插的DI单元相关联的双插值图像作为输出图像。

公开(公告)号：US10750002B2

公开(公告)日：2020-08-18

申请号：US16240793

申请日：2019-01-07

申请人： Ching-Hua Li ,  Li-Fang Chen ,  Chen-Hsien Cheng ,  Yi-Chang Wu ,  Po-Yueh Lan ,  Yu-Wei Lai ,  Kun-Chang Chen ,  Yi-Chun Lin

发明人： Ching-Hua Li ,  Li-Fang Chen ,  Chen-Hsien Cheng ,  Yi-Chang Wu ,  Po-Yueh Lan ,  Yu-Wei Lai ,  Kun-Chang Chen ,  Yi-Chun Lin

IPC分类号： H04M1/60 ,  H04M1/02

摘要： A communication device includes a first body, a second body, a first audio module, and a second audio module. The second body is rotatably connected to the first body. The first audio module is disposed on the first body. The second audio module is at least partially disposed on the first body. When the second body rotates relatively to the first body to be in a first state to switch the communication device to be in a first operation mode, at least a portion of the first audio module is turned on, and the second audio module is turned off. When the second body rotates relatively to the first body to be in a second state to switch the communication device to be in a second operation mode, the first audio module is turned off, and the second audio module is turned on.

公开(公告)号：USD885359S1

公开(公告)日：2020-05-26

申请号：US29649213

申请日：2018-05-29

申请人： Ching-Hua Li ,  Li-Fang Chen ,  Chen-Hsien Cheng ,  Yi-Chun Lin

设计人： Ching-Hua Li ,  Li-Fang Chen ,  Chen-Hsien Cheng ,  Yi-Chun Lin

公开(公告)号：US20180335810A1

公开(公告)日：2018-11-22

申请号：US15983103

申请日：2018-05-18

申请人： Tung-Ying Wu ,  Yi-Chun Lin ,  Ming-Chung Liu

发明人： Tung-Ying Wu ,  Yi-Chun Lin ,  Ming-Chung Liu

IPC分类号： G06F1/16

摘要： An electronic apparatus includes an electronic device and a base. The base includes a base body and a connection structure. The connection structure includes a cover and at least one pivot assembly. The pivot assembly is pivoted between the base body and the cover, such that the cover is adapted to pivot between a closed state and an opened state relatively to the base body. The cover and the base body cover the pivot assembly. The cover has a connection segment. When the electronic device is assembled to the base, the connection segment is adapted to be inserted into a slot of the electronic device.

公开(公告)号：US20150027753A1

公开(公告)日：2015-01-29

申请号：US14340564

申请日：2014-07-25

申请人： Chun-Ming Huang ,  Yi-Chun Lin ,  Yi-Chen Tsai ,  Ming-Kung Wu

发明人： Chun-Ming Huang ,  Yi-Chun Lin ,  Yi-Chen Tsai ,  Ming-Kung Wu

IPC分类号： H05K1/02

CPC分类号： G06F3/041 ,  G06F2203/04103 ,  H05K1/0296 ,  H05K3/12 ,  H05K2201/0326 ,  H05K2201/0329 ,  H05K2201/09045 ,  H05K2201/09154 ,  H05K2201/09681 ,  H05K2201/09727

摘要： A panel structure includes a substrate, a decoration layer and a conductive component. The decoration layer is located in a first region and the rest region is a second region. The decoration layer includes a middle portion and a first edge protruding portion located between the middle portion and the second region and thinner than the middle portion. Each the conductive component extends in a first direction towards the first region from the second region and crosses the first edge protruding portion followed by extending in a second direction on the middle portion of the decoration layer, the first direction intersects the second direction, each the conductive component on the first edge protruding portion has a first width, each the conductive component on the middle portion extends in the second direction and has a second width less than the first width.

摘要翻译： 面板结构包括基板，装饰层和导电部件。 装饰层位于第一区域中，其余区域是第二区域。 装饰层包括位于中间部分和第二区域之间的中间部分和第一边缘突出部分，并且比中间部分薄。 每个导电部件沿着第一方向从第二区域朝向第一区域延伸，并且穿过第一边缘突出部分，然后在装饰层的中间部分上沿第二方向延伸，第一方向与第二方向相交， 第一边缘突出部分上的导电部件具有第一宽度，中间部分上的导电部件在第二方向上延伸，并且具有小于第一宽度的第二宽度。

公开(公告)号：US20110039387A1

公开(公告)日：2011-02-17

申请号：US12910591

申请日：2010-10-22

申请人： Chi-San Wei ,  Kuo-Ming Wu ,  Yi-Chun Lin

发明人： Chi-San Wei ,  Kuo-Ming Wu ,  Yi-Chun Lin

IPC分类号： H01L21/336

CPC分类号： H01L29/1083 ,  H01L27/088 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor structure includes a semiconductor substrate; an n-type tub extending from a top surface of the semiconductor substrate into the semiconductor substrate, wherein the n-type tub comprises a bottom buried in the semiconductor substrate; a p-type buried layer (PBL) on a bottom of the tub, wherein the p-type buried layer is buried in the semiconductor substrate; and a high-voltage n-type metal-oxide-semiconductor (HVNMOS) device over the PBL and within a region encircled by sides of the n-type tub.

摘要翻译： 半导体结构包括半导体衬底; 从半导体衬底的顶表面延伸到半导体衬底中的n型桶，其中n型桶包括埋在半导体衬底中的底部; 在桶的底部设置p型掩埋层（PBL），其中p型掩埋层埋在半导体衬底中; 和高压n型金属氧化物半导体（HVNMOS）器件，并且在由n型槽的侧面包围的区域内。

公开(公告)号：US20070170469A1

公开(公告)日：2007-07-26

申请号：US11337147

申请日：2006-01-20

申请人： Kuo-Ming Wu ,  Jian-Hsing Lee ,  Yi-Chun Lin ,  Chi-Chih Chen

发明人： Kuo-Ming Wu ,  Jian-Hsing Lee ,  Yi-Chun Lin ,  Chi-Chih Chen

IPC分类号： H01L29/76

CPC分类号： H01L29/7816 ,  H01L29/0696 ,  H01L29/0873 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/4238

摘要： A semiconductor device includes a first doped region disposed on a first well in a semiconductor substrate; a second doped region disposed on a second well adjacent to the first well in the semiconductor substrate, the second doped region having a dopant density higher than that of the second well; and a gate structure overlying parts of the first and second wells for controlling a current flowing between the first and second doped regions. A first spacing distance from an interface between the second doped region and the second well to its closest edge of the gate structure is greater than 200 percent of a second spacing distance from a center point of second doped region to the edge of the gate structure, thereby increasing impedance against an electrostatic discharge (ESD) current flowing between the first and second doped regions during an ESD event.

摘要翻译： 半导体器件包括设置在半导体衬底中的第一阱上的第一掺杂区; 第二掺杂区域，其设置在与所述半导体衬底中的所述第一阱相邻的第二阱上，所述第二掺杂区域的掺杂剂密度高于所述第二阱的掺杂剂密度; 以及覆盖第一和第二阱的部分的栅极结构，用于控制在第一和第二掺杂区域之间流动的电流。 从第二掺杂区域和第二阱之间的界面到其栅极结构的最近边缘的第一间隔距离大于从第二掺杂区域的中心点到栅极结构边缘的第二间隔距离的200％ 从而增加针对在ESD事件期间在第一和第二掺杂区域之间流动的静电放电（ESD）电流的阻抗。

公开(公告)号：US20070129119A1

公开(公告)日：2007-06-07

申请号：US11349102

申请日：2006-02-08

申请人： Ching-Cheng Wang ,  Yi-Chun Lin ,  Chao-Hung Lin

发明人： Ching-Cheng Wang ,  Yi-Chun Lin ,  Chao-Hung Lin

IPC分类号： H04M1/00

CPC分类号： H04M1/0202 ,  H05K5/02

摘要： A composite-metal-composite sandwich structure is employed as a housing of a mobile electronic device. A metal sheet is preformed as a desired shape with nuts deposed thereon. A composite sheet is attached to each side of the metal sheet, exposing the nuts such that other components of the mobile electronic device can be screwed on the sandwich structure.

摘要翻译： 复合金属 - 复合夹层结构被用作移动电子设备的壳体。 将金属片预成型为所需的形状，其上放置螺母。 复合片材附着在金属片的每一侧上，露出螺母，使得移动电子装置的其它部件能够被拧在夹层结构上。