公开(公告)号：US20210055163A1

公开(公告)日：2021-02-25

申请号：US16961955

申请日：2018-08-29

申请人： SHANGHAI IC R&D CEBTER CO., LTD.

发明人： Xiaoxu KANG

IPC分类号： G01J5/02 ,  G01J5/38 ,  G01J5/08 ,  H01L31/101 ,  H01L31/024

摘要： The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.