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    LIGHT EMITTING DIODE HAVING A PLURALITY OF LIGHT EMITTING CELLS
    1.
    发明申请
    LIGHT EMITTING DIODE HAVING A PLURALITY OF LIGHT EMITTING CELLS 审中-公开

    公开(公告)号：US20190280178A1

    公开(公告)日：2019-09-12

    申请号：US16424178

    申请日：2019-05-28

    Applicant: SEOUL VIOSYS CO., LTD. ,  SEOUL VIOSYS CO., LTD.

    Inventor： Se Hee OH ,  Hyun A KIM ,  Jong Kyu KIM ,  Jong Hyeon CHAE

    IPC: H01L33/62 ,  H01L33/32 ,  H01L33/10 ,  H01L33/64

    Abstract: A light emitting diode having a plurality of light emitting cells is provided. The light emitting diode according to an exemplary embodiment includes a lower insulation layer covering an ohmic reflection layer, connectors disposed on the lower insulation layer to connect the light emitting cells, and an upper insulation layer covering the connectors and the lower insulation layer. An edge of the lower insulation layer is spaced apart farther from an edge of the upper insulation layer than an edge of the light emitting cell. The lower insulation layer susceptible to moisture may be protected and reliability of the light emitting diode may improve.

    LIGHT EMITTING DIODE
    2.
    发明申请
    LIGHT EMITTING DIODE 有权

    公开(公告)号：US20210359188A1

    公开(公告)日：2021-11-18

    申请号：US17389025

    申请日：2021-07-29

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jae Kwon KIM ,  Min Chan HEO ,  Kyoung Wan KIM ,  Jong Kyu KIM ,  Hyun A KIM ,  Joon Sup LEE

    IPC: H01L33/62 ,  H01L33/46 ,  H01L27/15 ,  H01L33/10

    Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

    CHIP-SCALE PACKAGE LIGHT EMITTING DIODE
    3.
    发明申请
    CHIP-SCALE PACKAGE LIGHT EMITTING DIODE 有权

    公开(公告)号：US20210151628A1

    公开(公告)日：2021-05-20

    申请号：US17157600

    申请日：2021-01-25

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Kyu KIM ,  Min Woo KANG ,  Se Hee OH ,  Hyoung Jin LIM

    IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/44

    Abstract: A chip-scale package type light emitting diode includes a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer. The openings of the dielectric layer include openings that have different sizes from one another.

    LIGHT EMITTING DIODE
    5.
    发明申请
    LIGHT EMITTING DIODE 审中-公开
    发光二极管

    公开(公告)号：US20150076532A1

    公开(公告)日：2015-03-19

    申请号：US14551808

    申请日：2014-11-24

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Yeo Jin YOON ,  Jong Kyu KIM ,  Jun Hee LEE

    IPC: H01L27/15

    CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/385 ,  H01L33/387 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: AC LED according to the present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer consisting of a first conductive compound semiconductor layer formed on top of the substrate, an upper semiconductor layer consisting of a second conductive compound semiconductor layer formed on top of the lower semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and the respective light emitting cells are arranged so that the upper electrode pad and the lower electrode of one of the light emitting cells are symmetric with is respect to those of adjacent another of the light emitting cells.

    Abstract translation: 根据本发明的AC LED包括衬底和至少一个具有串联连接在衬底上的多个发光单元的串联阵列。 每个发光单元包括由形成在基板顶部上的第一导电化合物半导体层构成的下半导体层，由形成于下半导体层顶部的第二导电化合物半导体层构成的上半导体层，活性层 介于下半导体层和上半导体层之间的下电极，形成在衬底的第一角上露出的下半导体层上的下电极，形成在上半导体层上的上电极层和形成在上电极层上的上电极焊盘 在基片的第二个角落。 上电极焊盘和下电极分别设置在彼此对角相对的角上，并且各发光单元被布置成使得一个发光单元的上电极焊盘和下电极相对于对称 到相邻的发光单元的那些。

    LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
    7.
    发明申请
    LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 审中-公开
    发光二极管及其制造方法

    公开(公告)号：US20150311398A1

    公开(公告)日：2015-10-29

    申请号：US14791824

    申请日：2015-07-06

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Seom Geun LEE ,  Jong Kyu KIM ,  Yeo Jin YOON ,  Jae Kwon KIM ,  Mae Yi KIM

    IPC: H01L33/42 ,  H01L33/46 ,  H01L33/08 ,  H01L33/62

    CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

    Abstract: An exemplary embodiment discloses a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate, the first light emitting cell and the second light emitting cell being spaced apart from each other. The light emitting diode also includes a first zinc oxide (ZnO) layer disposed on the first light emitting cell, the first ZnO layer being electrically connected to the first light emitting cell. The light emitting diode also includes a current blocking layer disposed between a portion of the first light emitting cell and the first ZnO layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and a first side of insulation layer are connected to each other.

    Abstract translation: 示例性实施例公开了一种包括第一发光单元和设置在基板上的第二发光单元的发光二极管，第一发光单元和第二发光单元彼此间隔开。 发光二极管还包括设置在第一发光单元上的第一氧化锌（ZnO）层，第一ZnO层电连接到第一发光单元。 发光二极管还包括设置在第一发光单元的一部分和第一ZnO层之间的电流阻挡层，电连接第一发光单元和第二发光单元的互连以及设置在互连之间的绝缘层 和第一发光单元的侧面。 电流阻挡层和绝缘层的第一侧彼此连接。

    LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
    8.
    发明申请
    LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 有权
    发光二极管及其制造方法

    公开(公告)号：US20140175465A1

    公开(公告)日：2014-06-26

    申请号：US14135925

    申请日：2013-12-20

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Seom Geun LEE ,  Jong Kyu KIM ,  Yeo Jin YOON ,  Jae Kwon KIM ,  Mae Yi KIM

    IPC: H01L33/62 ,  H01L27/15

    CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

    Abstract: Exemplary embodiments of the present invention provide a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate and spaced apart from each other, a first transparent electrode layer disposed on the first light emitting cell and electrically connected to the first light emitting cell, a current blocking layer disposed between a portion of the first light emitting cell and the first transparent electrode layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and the insulation layer are connected to each other.

    Abstract translation: 本发明的示例性实施例提供一种发光二极管，其包括第一发光单元和布置在基板上并彼此间隔开的第二发光单元，第一透明电极层，设置在第一发光单元上并电连接到 第一发光单元，设置在第一发光单元的一部分和第一透明电极层之间的电流阻挡层，电连接第一发光单元和第二发光单元的互连以及设置在第一发光单元之间的绝缘层 互连和第一发光单元的侧表面。 电流阻挡层和绝缘层彼此连接。

    LIGHT EMITTING DIODE CHIP
    10.
    发明申请
    LIGHT EMITTING DIODE CHIP 审中-公开

    公开(公告)号：US20200220049A1

    公开(公告)日：2020-07-09

    申请号：US16823734

    申请日：2020-03-19

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Se Hee OH ,  Jae Kwon KIM ,  Jong Kyu KIM ,  Hyun A KIM ,  Joon Sup LEE

    IPC: H01L33/46 ,  H01L33/10 ,  H01L33/40 ,  H01L33/48 ,  H01L23/00

    Abstract: A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.

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