公开(公告)号：US11287840B2

公开(公告)日：2022-03-29

申请号：US16949836

申请日：2020-11-17

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Zoltan Randlisek

IPC: G05F3/26

Abstract: Voltage reference with temperature compensation. At least one example embodiment is a method of producing a compensate voltage reference, the method comprising: driving a reference current through a reference current path of a current mirror, and driving a mirror current through a mirror current path of the current mirror; driving the reference current through a first reference transistor having a control input, and driving the mirror current though a second reference transistor having a control input; equalizing the reference current flow through the first reference transistor to the mirror current flow through the second reference transistor by adjusting a control voltage on the control inputs of the first and second reference transistors; producing a reference voltage proportional to the control voltage; and compensating the reference voltage for temperature effects by adjusting a mirror ratio of the current mirror.