SUBSTRATE PROCESSING APPARATUS
    1.
    发明公开

    公开(公告)号:US20230369018A1

    公开(公告)日:2023-11-16

    申请号:US18310740

    申请日:2023-05-02

    申请人: SEMES CO., LTD.

    IPC分类号: H01J37/32

    摘要: There is provided a substrate processing apparatus including a chamber having a processing space therein, a dielectric window arranged at an upper portion of the chamber and configured to cover an upper surface of the chamber, and an RF source disposed on the dielectric window and configured to supply RF power to generate plasma from gas in the processing space, wherein the RF source includes an RF electrode disposed on the dielectric window and an RF plate disposed on the RF electrode, the dielectric window includes a groove extending vertically downward from an uppermost surface of the dielectric window, and the RF plate has a ring shape.