公开(公告)号：US20130307110A1

公开(公告)日：2013-11-21

申请号：US13893592

申请日：2013-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doo-Won KWON ,  June-Mo KOO ,  Yun-Ki LEE ,  Se-Hoon JANG

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14607 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14689

Abstract: A semiconductor device includes a substrate including a front side and a back side opposite the front side, first P-type regions located adjacent to the back side and spaced apart from each other in the substrate, N-type regions located under the first P-type regions and spaced apart from each other in the substrate, and second P-type regions located adjacent to the back side and located between the first P-type regions.

Abstract translation: 半导体器件包括：基板，其包括前侧和与前侧相反的背面;位于基板的背面相邻且间隔开的第一P型区域，位于第一P- 并且在基板中彼此间隔开，并且位于相邻于背侧且位于第一P型区域之间的第二P型区域。

公开(公告)号：US20170025461A1

公开(公告)日：2017-01-26

申请号：US15285018

申请日：2016-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun-Ki LEE ,  Chang-Rok MOON ,  Min-Wook JUNG

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687

Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.

Abstract translation: 提供图像传感器。 图像传感器包括基板，第一层间绝缘层，第一金属线和屏蔽结构。 衬底包括像素阵列，外围电路区域和布置在像素阵列和外围电路区域之间的接口区域。 第一层间绝缘层形成在基板的第一表面上。 第一金属线设置在像素阵列的第一层间绝缘层上。 第二层间绝缘层设置在第一层间绝缘层上，其中第二层间绝缘层覆盖第一金属线。 屏蔽结构通过衬底在屏蔽结构中电绝缘衬底的像素阵列和外围电路区域的界面区域中。

公开(公告)号：US20140213011A1

公开(公告)日：2014-07-31

申请号：US14228914

申请日：2014-03-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun-Ki LEE

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643

Abstract: A CIS and a method of manufacturing the same, the CIS including a substrate having a first surface and second surface opposite thereto, the substrate including an APS array region including a photoelectric transformation element and a peripheral circuit region; an insulating interlayer on the first surface of the substrate and including metal wirings electrically connected to the photoelectric transformation element; a light blocking layer on the peripheral circuit region of the second surface of the substrate, exposing the APS array region, and including a plurality of metal wiring patterns spaced apart from one another to form at least one drainage path along a boundary region between the APS array region and the peripheral circuit region; a color filter layer on the second surface of the substrate covering the APS array region and the light blocking layer; and a microlens on the color filter layer on the APS array region.

Abstract translation: 一种CIS及其制造方法，所述CIS包括具有与其相反的第一表面和第二表面的基板，所述基板包括包括光电转换元件和外围电路区域的APS阵列区域; 在所述基板的第一表面上的绝缘中间层，并且包括电连接到所述光电转换元件的金属布线; 在所述基板的第二表面的外围电路区域上的遮光层，暴露所述APS阵列区域，并且包括彼此间隔开的多个金属布线图案，以形成沿着所述APS之间的边界区域的至少一个排水路径 阵列区域和外围电路区域; 在所述基板的覆盖所述APS阵列区域和所述遮光层的所述第二表面上的滤色器层; 以及APS阵列区域上的滤色器层上的微透镜。

公开(公告)号：US20130288420A1

公开(公告)日：2013-10-31

申请号：US13800569

申请日：2013-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun-Ki LEE

IPC: H01L31/18

CPC classification number: H01L31/1864 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/14698 ,  H04N5/378

Abstract: A method of making a semiconductor device includes forming wiring on a first surface of a first substrate, removing a portion of a second surface of the first substrate to reduce a thickness of the first substrate, forming an oxide film on the second surface of the first substrate based on an oxidation process performed within a temperature range, and removing the oxide film. The temperature range may be below a melting temperature of the wiring, and the oxide film is formed to a depth that includes one or more defects below the second surface of the first substrate. Removal of the oxide film results in removing a portion of the first substrate that includes the one or more effects.

Abstract translation: 制造半导体器件的方法包括在第一衬底的第一表面上形成布线，去除第一衬底的第二表面的一部分以减小第一衬底的厚度，在第一衬底的第二表面上形成氧化物膜 基于在温度范围内进行的氧化处理的基板，以及除去氧化膜。 温度范围可能低于布线的熔化温度，氧化膜形成为在第一基板的第二表面下方包括一个或多个缺陷的深度。 去除氧化膜导致去除包括一种或多种效应的第一衬底的一部分。