公开(公告)号：US20240170048A1

公开(公告)日：2024-05-23

申请号：US18219369

申请日：2023-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youse KIM ,  Hyunggon KIM ,  Bongsoon LIM

IPC: G11C11/4093 ,  G11C11/408

CPC classification number: G11C11/4093 ,  G11C11/4085 ,  G11C11/4087

Abstract: A nonvolatile memory device includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer includes word-lines, bit-lines and a memory cell array which includes one or more memory blocks spaced apart from each other, one or more dummy blocks between the one or more memory blocks and a through-hole via region. The second semiconductor layer is under the first semiconductor layer includes a control circuit. The control circuit divides each of the one or more dummy blocks into an adjacent sub-block directly contacting the through-hole via region and a non-adjacent sub-block based on a relative distance from the through-hole via region in the first direction and uses each of the non-adjacent sub-blocks as a sub-block to store data.